Skip to main content
SpringerLink
Log in

The research of indirectly-heated type microwave power sensors based on GaAs MMIC technology

  • Technical Paper
  • Published:
Microsystem Technologies Aims and scope Submit manuscript

Abstract

In this work, the effect of the temperature and the humidity on the indirectly-heated type microwave power sensor is researched in order to extend its application field, and their mechanism is revealed. The fabrication of this microwave power sensor is divided into a front side and a back side processing using GaAs MMIC process and MEMS technology. One advantage of this microwave power sensor consists in compatibility with MMIC devices and other planar connecting circuits structures with zero dc power consumption. The measurement results show that the environment temperature has a significant effect on the performance of the indirectly-heated type microwave power sensor, and the humidity has a little effect on its performance. The temperature dependent coefficient is about 0.6 mV/(W K), which has an important reference value to other thermoelectric microwave power sensor. The reason is that the accuracy microwave power measurement will be realized as long as the environment temperature is tracked in the testing process.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10

Similar content being viewed by others

References

  • Dehe A, Krozer V, Chen B, Hartnagel HL (1996) High-sensitivity microwave power sensor for GaAs-MMIC implementation. Electron Lett 32(23):2149–2150

    Article  Google Scholar 

  • Dehe A, Fricke-Neuderth K, Krozer V (2002) Broadband thermoelectric microwave power sensors using GaAs foundry process. IEEE MTT-S Digest, pp 1829–1832, Seattle, WA, USA

  • Jaeggi D, Baltes H, Moser D (1992) Thermoelectric AC power sensor by CMOS technology. IEEE Electron Device Lett 13(7):366–368

    Article  Google Scholar 

  • Kasap SO (2001) Principles of electronic materials and devices, 2nd edn. McGraw-Hill Higher Education, New York

  • Kodato S, Wakabayashi T, Zhuang QD, Uchida S (1996) New structure for DC-60 GHz thermal power sensor, vol 2. In: Proceedings of International Conference on IEEE MTT-S Digest. San Francisco, USA, pp 871–874

  • Kodato S, Wakabayashi T, Zhuang QD, Uchida S (1997) New structure for DC-65 GHz thermal power sensor. In: Proceedings of International Conference on solid-state sensors and actuators, Chicago, USA. pp. 1279–1282

  • Kwon S, Kim J, Park G, Hong Y, Ju B, Song I (2009) RF device package method using Au to Au direct bonding technology. Microelectron Reliab 49(1):99–102

    Article  Google Scholar 

  • Lalinsky T, Drzik M, Jakovenko J, Husak M (2006) GaAs thermally based MEMS devices-fabrication techniques, characterization and modeling. http://www.buchhandel.de/WebApi1/GetMmo.asp?MmoId=999879&mmoType=PDF

  • Margomenos A, Katehi LPB (2004) Fabrication and accelerated hermeticity testing of an on-wafer package for RF MEMS. IEEE Trans Microw Theory Tech 52(6):1626–1636

    Article  Google Scholar 

  • Milanovic V, Gaitan M, Bowen ED, Tea NH, Zaghloul ME (1997) Thermoelectric power sensor for microwave applications by commercial CMOS fabrication. IEEE Electron Device Lett 18(9):450–453

    Article  Google Scholar 

  • Shih KK, Blum JM (1972) Contact resistances of Au-Ge-Ni, Au-Zn and Al to III–V compounds. Solid-State Electron 15(11):1177–1180

    Article  Google Scholar 

  • Van Herwaarden AW, Sarro PM (1986) Thermal sensors based on the Seebeck effect. Sens Actuators 10:321–346

    Article  Google Scholar 

  • Wang DB, Liao XP (2012) Optimization of indirectly-heated type microwave power sensors based on GaAs micromachining. IEEE Sens J 12(5):1349–1355

    Article  Google Scholar 

  • Wang De-bo, Liao Xiao-ping (2013) Research on temperature characteristic of thermoelectric microwave power sensors based on GaAs MMIC technology. IEE Electron Lett 49(23):1462–1464

    Article  MathSciNet  Google Scholar 

  • Wang DB, Liao XP, Liu T (2012) A thermoelectric power sensor and its package based on MEMS technology. IEEE J Microelectromech Syst 21(1):121–131

    Article  MathSciNet  Google Scholar 

  • Wang Debo, Bai Wenjuan, Zhang Changchun, Guo Yanyan, Chen Jing (2015) Development research of thermocouple-based microwave power sensors using AC/DC substitution method. Microsyst Technol 21(1):21–28

    Article  Google Scholar 

Download references

Acknowledgments

This work was supported by National Natural Science Foundation of China (11304158), Province Natural Science Foundation of Jiangsu (BK20130878, BK20140870, BK20140890), the open research fund of Key Laboratory of MEMS of Ministry of Education, Southeast University (3206005302), Scientific Research Foundation of Nanjing University of Posts and Telecommunications (NY213024), and Provincial College Students’ Innovative Training Program.

Author information

Authors and Affiliations

  1. Jiangsu Province Engineering Lab of RF Integration & Micropackage, Nanjing University of Posts and Telecommunication, Nanjing, 210003, China

    De-bo Wang, Bo Gao, Yi Zhang, Jiang Zhao, Changchun Zhang & Yanyan Guo

Authors
  1. De-bo Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Bo Gao
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yi Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Jiang Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Changchun Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Yanyan Guo
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to De-bo Wang.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Wang, Db., Gao, B., Zhang, Y. et al. The research of indirectly-heated type microwave power sensors based on GaAs MMIC technology. Microsyst Technol 22, 2233–2239 (2016). https://doi.org/10.1007/s00542-015-2611-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00542-015-2611-7

Keywords

Search

Navigation