Abstract
AlGaN/GaN high electron mobility transistor (HEMT) was successfully fabricated by complementary metal-oxide semiconductor field effect transistor-compatible fabrication method, and the label-free, electrical detection of prostate specific antigen in real time using the biomolecule-gate AlGaN/GaN HEMT sensor was presented. It shows a rapid response when target prostate biomarker in buffer solution was added to the antibody-immobilized sensing area. The linear range for target prostate specific antigen detection has been demonstrated from 0.1 pg/ml to 10.269 ng/ml and a low detection below 0.1 pg/ml level is estimated, which is the best result of AlGaN/GaN HEMT biosensor for prostate specific antigen (PSA) detection till now. The sensitivity of 0.027 % is determined for 0.1 pg/ml prostate specific antigen solution. The electrical result of the biomolecule-gated AlGaN/GaN HEMT biosensor suggested that this biosensor might be a useful tool for the prostate cancer screening.
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Acknowledgments
This work was supported by the NSFC project under grant number 61104226, the National Basic Research Program of China (2010CB934700) and partial support from CAS Instrumentation Project (#YZ201152). We thank the Nano-Characterization and Nano-Fabrication Platforms at the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences for the fabrication supporting and thank Professor Jincheng Zhang for offering AlGaN/GaN samples.
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Li, Jd., Cheng, Jj., Miao, B. et al. Label free electrical detection of prostate specific antigen with millimeter grade biomolecule-gated AlGaN/GaN high electron mobility transistors. Microsyst Technol 21, 1489–1494 (2015). https://doi.org/10.1007/s00542-014-2303-8
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DOI: https://doi.org/10.1007/s00542-014-2303-8