Abstract
We present the results of a novel micro-beam deflection test used to investigate the static and dynamic mechanical behavior of submicron-thick metal films. The method demonstrated in this study allows researchers to observe the motion of micro and nano-scale thin films responding to electrostatic loads, by means of laser reflection measurements at frequency rates of up to 500 Hz. Researchers fabricated a supporting frame and a novel triangular shaped “paddle” beam designed to provide uniform plane stress distribution while undergoing deflection. A simple geometric calculation, based on cantilever deflection, enabled the degree of strain to be determined, which in turn provided the Young’s modus for aluminum film of a given thickness. We also studied the dynamic behavior using the dynamic frequency response of the beam, generated by electrostatic forces under various loads and vacuum pressure conditions. Our results showed that air damping has a significant influence on the free damping behavior of specimens, and only a minor influence on damping frequency. We determined the loss angle and frequency using sweep frequency and free damping methods, which were very consistent with paddle resonant frequencies. The loss angle obtained from a simple silicon micro-beam was 2.001 × 10−4°using the free damping method and 2.23 × 10−4°using the sweep frequency method. The dynamic response loss mechanism measured in this experiment provides incentive for the further study of grain boundary motion and dislocation motion in thin films.
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Acknowledgments
The authors express their gratitude to Professor Walter L. Brown of Lehigh University, for his kind advice. This work was supported by Taiwan National Science Council; grant number NSC 98 -2221 -E- 005- 010 and was also supported in part, by the Ministry of Education, Taiwan, under the ATU plan.
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Cheng, YC., Tong, CJ. & Lin, MT. Measurement of static and dynamic mechanical behavior of micro and nano-scale thin metal films: using micro-cantilever beam deflection. Microsyst Technol 17, 721–730 (2011). https://doi.org/10.1007/s00542-010-1202-x
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DOI: https://doi.org/10.1007/s00542-010-1202-x