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V:YAG – a new passive Q-switch for diode-pumped solid-state lasers

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gsa

=3.0×10-18 cm2 and σesa=1.4×10-19 cm2 at 1064 nm, and σgsa=7.2×10-18 cm2 and σesa=7.4×10-19 cm2 at 1342 nm. Q-switched operation was demonstrated at 1064 nm and 1342 nm from a Nd:YVO4 microchip laser, producing pulses as short as 9.3 ns at 1342 nm with peak powers of 350 W.

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Authors and Affiliations

  1. International Laser Center, 65/17 F. Skaryna Ave., 220027 Minsk, Belarus, , , , , , BY

    A.M. Malyarevich, I.A. Denisov, K.V. Yumashev & V.P. Mikhailov

  2. J.F. Allen Research Laboratories, School of Physics and Astronomy, University of St Andrews, St Andrews, Scotland, KY16 9SS, UK, , , , , , UK

    R.S. Conroy & B.D. Sinclair

Authors
  1. A.M. Malyarevich
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  2. I.A. Denisov
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  3. K.V. Yumashev
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  4. V.P. Mikhailov
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  5. R.S. Conroy
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  6. B.D. Sinclair
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Received: 17 March 1998/Revised version: 8 June 1998

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Malyarevich, A., Denisov, I., Yumashev, K. et al. V:YAG – a new passive Q-switch for diode-pumped solid-state lasers . Appl Phys B 67, 555–558 (1998). https://doi.org/10.1007/s003400050544

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  • DOI: https://doi.org/10.1007/s003400050544

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