Nanostructure fabrication by reactive-ion etching of laser-focused chromium on silicon

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plasma. We show that the result can be an array of parallel wires as narrow as 68 nm or an array of parallel Si trenches as narrow as 85 nm. The laser-focused deposition process is inherently parallel, so a large area is patterned simultaneously with an accurate periodicity of 212.78 nm. This method represents a novel way to make large, coherent arrays of sub-100 nm-size structures.