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Analysis on the high luminous flux white light from GaN-based laser diode

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Abstract

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. At 500 mA injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/W, respectively. The relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I’Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

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Authors and Affiliations

  1. Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China

    Y. Xu, H. Hu, L. Chen & G. Song

  2. National Engineering Research Center for Rare Earth Materials, General Research Institute for Nonferrous Metals, and Grirem Advanced materials Co., Ltd., 100088, Beijing, China

    W. Zhuang

Authors
  1. Y. Xu
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  2. H. Hu
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  3. L. Chen
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  4. G. Song
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  5. W. Zhuang
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Correspondence to Y. Xu.

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Xu, Y., Hu, H., Chen, L. et al. Analysis on the high luminous flux white light from GaN-based laser diode. Appl. Phys. B 98, 83–86 (2010). https://doi.org/10.1007/s00340-009-3651-4

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  • DOI: https://doi.org/10.1007/s00340-009-3651-4

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