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Sub-nanosecond microchip laser with intracavity Raman conversion

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Abstract.

Efficient sub-nanosecond pulse operation of microchip lasers with intracavity Raman conversion and pulse compression is presented for the first time. The microchip lasers were composed of Nd:LSB or Nd:YAG laser crystals, Cr4+:YAG saturable absorber, and Ba(NO3)2 Raman medium. The pulse duration obtained at the Stokes wavelength (1196 nm) was as short as 118 ps. Optical conversion efficiency of laser-diode pump power to the Stokes power of 8% was reached. Pulse energy and peak power of Stokes emission were 1.2 μJ and 5.4 kW, correspondingly. Numerical calculations are in good agreement with obtained experimental results.

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Received: 20 December 2002 / Revised version: 6 March 2003 / Published online: 5 May 2003

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ID="*"Corresponding author. Fax: +1-716/645-6945, E-mail: ankuzmin@acsu.buffalo.edu

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ID="**"Present address: University at Buffalo, SUNY, The Institute for Lasers, Photonics, and Biophotonics, 458 NSC, Buffalo, NY 14 260-3000, USA

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Demidovich, A., Apanasevich, P., Batay, L. et al. Sub-nanosecond microchip laser with intracavity Raman conversion . Appl Phys B 76, 509–514 (2003). https://doi.org/10.1007/s00340-003-1149-z

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  • DOI: https://doi.org/10.1007/s00340-003-1149-z

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