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Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction

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Abstract

N-type tunnel field effect transistors (TFETs) with Si1−xGex/Si hetero-junction in the ultra-shallow N+ pocket region have been fabricated. This paper investigates the total ionization dose (TID) effects on the electrical characteristics of these N-type TFET devices, including transfer and output characteristics, via a 60Co γ-ray irradiation source. TID has little impact on the on-state current for TFETs with and without P well. With the increase in total dose, however, a shift in the transfer characteristics, such as the off-state current and subthreshold slope is observed. Under the same TID condition, TFETs with P well exhibit more robustness as compared to TFETs without P well. The characteristics under room temperature and high temperature annealing conditions after irradiation are also investigated. The underlying mechanisms, such as the interplay among bulk trapped charge in gate oxide-induced inversion and interface trap-induced trap-assisted-tunneling, are identified by TCAD simulation and are discussed in detail.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China under Grant Nos. 61704188 and 616340084.

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Authors and Affiliations

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Kai Xi, Jinshun Bi, Gaobo Xu, Bo Li & Ming Liu

  2. University of Chinese Academy of Sciences, Beijing, 100029, China

    Jinshun Bi

  3. School of Internet of Things Engineering, Hohai University, Changzhou, 213022, China

    Jiamin Chu & Haibin Wang

  4. Electrical and Computer Engineering Department, Sri Sri University, Godi Sahi, Cuttack, Orissa, 754006, India

    Majumdar Sandip

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  1. Kai Xi
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Correspondence to Jinshun Bi or Gaobo Xu.

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Xi, K., Bi, J., Chu, J. et al. Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction. Appl. Phys. A 126, 440 (2020). https://doi.org/10.1007/s00339-020-03622-2

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