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Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

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Abstract

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current–voltage–temperature, turn-on voltage–temperature and series resistance–temperature in the high-temperature range of 300–420 K. It is observed that an exponential decrease in the series resistance (RS) and increase in the ideality factor (n) and barrier height (ϕb) with increase in temperature. The thermal coefficient (Kj) is determined to be − 1.3 mV K−1 at ≥ 300 K. The effective ϕb is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature (T0) resulting from the Cheung’s functions [dV/d(lnI) vs. I and H(I) vs. I], is seen that there is good agreement between the T0 values from both Cheung’s functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

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Acknowledgements

This study was partially supported by the BK21 Plus funded by the Ministry of Education (21A20131600011).

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Authors and Affiliations

  1. Department of Electronics and Communication, Dayananda Sagar College of Engineering, Bangalore, 560078, India

    Varra Niteesh Reddy

  2. School of Electronics Engineering, Kyungpook National University, Daegu, 41566, South Korea

    M. Siva Pratap Reddy & Jung-Hee Lee

  3. Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, 560012, India

    K. R. Gunasekhar

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  1. Varra Niteesh Reddy
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  2. M. Siva Pratap Reddy
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  4. Jung-Hee Lee
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Correspondence to M. Siva Pratap Reddy or Jung-Hee Lee.

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Niteesh Reddy, V., Reddy, M.S.P., Gunasekhar, K.R. et al. Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions. Appl. Phys. A 124, 291 (2018). https://doi.org/10.1007/s00339-018-1708-0

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  • DOI: https://doi.org/10.1007/s00339-018-1708-0

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