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Improved performance of N-face AlGaN-based deep ultraviolet light-emitting diodes with superlattice electron blocking layer

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Abstract

The performance of N-face AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs) with superlattice electron blocking layer (EBL) is investigated by using two-dimensional numerical simulation. The simulated results demonstrate that the adoption of N-face UV LED with superlattice EBL is critical to improve the device’s performance. In comparison with the Ga-face UV LEDs with superlattice and conventional EBL, the N-face device structure with superlattice EBL possesses numerous advantages. By detailedly analyzing the profiles of energy band diagrams, distribution of carrier concentration, and radiative recombination rate, the advantages of N-face UV LED with superlattice EBL are attributed to the higher barrier for electron leakage, and simultaneously reduced barrier for hole injection compared with conventional Ga-face UV LEDs.

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References

  1. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, Semicond. Sci. Technol. 26, 014036 (2011)

    Article  ADS  Google Scholar 

  2. K. Kim, J. Li, S.X. Jin, J.Y. Lin, H.X. Jiang, Appl. Phys. Lett. 83, 566 (2003)

    Article  ADS  Google Scholar 

  3. Y. Taniyasu, M. Kasu, T. Makimoto, Nature 441, 325 (2006)

    Article  ADS  Google Scholar 

  4. Y. Kuo, C.Y. Su, C. Hsieh, W.Y. Chang, C.A. Huang, Y.W. Kiang, C.C. Yang, Opt. Lett. 40, 4229 (2015)

    Article  ADS  Google Scholar 

  5. Y.H. Lu, Y.K. Fu, S.J. Huang, Y.K. Su, K.L. Wang, M.H. Pikuhn, M.T. Chu, J. Appl. Phys. 115, 113102 (2014)

    Article  ADS  Google Scholar 

  6. M.J. Hou, Z.X. Qin, C.G. He, J.A. Cai, X.Q. Wang, B. Shen, Opt. Express 22, 19589 (2014)

    Article  ADS  Google Scholar 

  7. G.F. Yang, F. Xie, K.X. Dong, P. Chen, J.J. Xue, T. Zhi, T. Tao, B. Liu, Z.L. Xie, X.Q. Xiu, Phys. E 62, 55 (2014)

    Article  Google Scholar 

  8. T.M. Al Tahtamouni, J.Y. Lin, H.X. Jiang, AIP Adv. 4, 047122 (2014)

    Article  ADS  Google Scholar 

  9. Y.A. Yin, N.Y. Wang, G.H. Fan, S.T. Li, IEEE Trans. Electron Devices 61, 2849 (2014)

    Article  ADS  Google Scholar 

  10. Z.H. Zhang, Z.G. Ju, W. Liu, S.T. Tan, Y. Ji, Z. Kyaw, X.L. Zhang, N. Hasanov, X.W. Sun, H.V. Demir, Opt. Lett. 39, 2483 (2014)

    Article  ADS  Google Scholar 

  11. M. Zhang, Y. Li, S.C. Chen, W. Tian, J.T. Xu, X.Y. Li, Z.H. Wu, Y.Y. Fang, J.N. Dai, C.Q. Chen, Superlattice Microstruct. 75, 63 (2014)

    Article  ADS  Google Scholar 

  12. Y.A. Yin, N.Y. Wang, S. Li, Y. Zhang, G.H. Fan, Appl. Phys. A 119, 41 (2015)

    Article  ADS  Google Scholar 

  13. J. Verma, J. Simon, V. Protasenko, T. Kosel, H.G. Xing, D. Jena, Appl. Phys. Lett. 99, 171104 (2011)

    Article  ADS  Google Scholar 

  14. J. Piprek, S. Li, Opt. Quantum Electron 42, 89 (2010)

    Article  Google Scholar 

  15. J. Simon, V. Protasenko, C.X. Lian, H.L. Xing, D. Jena, Science 327, 60 (2010)

    Article  ADS  Google Scholar 

  16. V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, P. Lugli, Phys. Rev. B 60, 8849 (1999)

    Article  ADS  Google Scholar 

  17. I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2011)

    Article  ADS  Google Scholar 

  18. M.S. Shur, R. Gaska, IEEE Trans. Electron Devices 57, 12 (2010)

    Article  ADS  Google Scholar 

Download references

Acknowledgments

This work is supported by the Natural Science of Foundation of Jiangsu Province (Grant Nos. BK20150158, BM2014402), National Natural Science Foundation of Special Theoretical Physics (Grant No. 11547168), the Fundamental Research Funds for Central Universities (Grant Nos. JUSRP51517, JUSRP11408, JUSRP51323B, JUSRP211A19), the China Postdoctoral Science Foundation (Grant Nos. 2014M561623, 2014M551559), Anhui Provincial Natural Science Foundation (Grant No. 1508085MF135), Key Science and Technology Program of Anhui Province (Grant No. 1501021045).

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Authors and Affiliations

  1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China

    F. Xie

  2. School of Automobile and Transportation, Wuxi Institute of Technology, Wuxi, 214121, China

    F. X. Wang

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  1. F. Xie
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  2. F. X. Wang
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Correspondence to F. X. Wang.

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Xie, F., Wang, F.X. Improved performance of N-face AlGaN-based deep ultraviolet light-emitting diodes with superlattice electron blocking layer. Appl. Phys. A 122, 781 (2016). https://doi.org/10.1007/s00339-016-0310-6

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  • DOI: https://doi.org/10.1007/s00339-016-0310-6

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