Abstract
Energy transport in aluminum thin film is examined due to temperature disturbance at the film edge. Thermal separation of electron and lattice systems is considered in the analysis, and temperature variation in each sub-system is formulated. The transient analysis of frequency-dependent and frequency-independent phonon radiative transport incorporating electron–phonon coupling is carried out in the thin film. The dispersion relations of aluminum are used in the frequency-dependent analysis. Temperature at one edge of the film is oscillated at various frequencies, and temporal response of phonon intensity distribution in the film is predicted numerically using the discrete ordinate method. To assess the phonon transport characteristics, equivalent equilibrium temperature is introduced. It is found that equivalent equilibrium temperature in the electron and lattice sub-systems oscillates due to temperature oscillation at the film edge. The amplitude of temperature oscillation reduces as the distance along the film thickness increases toward the low-temperature edge of the film. Equivalent equilibrium temperature attains lower values for the frequency-dependent solution of the phonon transport equation than that corresponding to frequency-independent solution.
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Abbreviations
- C :
-
Volumetric specific heat capacity
- G :
-
Electron–phonon coupling constant
- G k :
-
\( {{G\left( {T_{\text{p}} - T_{\text{e}} } \right)} \mathord{\left/ {\vphantom {{G\left( {T_{\text{p}} - T_{\text{e}} } \right)} {12\pi k_{\hbox{max} } }}} \right. \kern-0pt} {12\pi k_{\hbox{max} } }} \) Electron–phonon coupling contribution in frequency-dependent solution
- I p :
-
Phonon intensity
- I e :
-
Electron intensity
- I o :
-
Equilibrium intensity
- I + :
-
Forward intensity
- I − :
-
Backward intensity
- K n :
-
Kundsen number
- k :
-
Wave number
- k e :
-
Electron thermal conductivity
- k p :
-
Phonon thermal conductivity
- L :
-
Film thickness
- \( q_{\text{e}}^{\prime \prime } \) :
-
Electron heat flux
- \( q_{\text{p}}^{\prime \prime } \) :
-
Phonon heat flux
- T :
-
Equivalent equilibrium temperature
- t :
-
Time
- v :
-
Speed
- x :
-
Cartesian coordinate
- Δx :
-
Grid spacing in the x-direction
- Λ:
-
Mean free path
- μ :
-
Cosine of the azimuthal angle
- τ :
-
Relaxation time
- τ d :
-
C e/G
- A:
-
Acoustic
- e:
-
Electron
- k :
-
Wavenumber
- L:
-
Longitudinal
- p:
-
Phonon
- T:
-
Transverse
References
R. Alkhairy, Green’s function solution for the dual-phase-lag heat equation. Appl. Math. 3, 1170–1178 (2012)
B.S. Yilbas, A.Y. Al-Dweik, S. Bin Mansour, Analytical solution of hyperbolic heat conduction equation in relation to laser short-pulse heating. Phys. B 406(8), 1550–1555 (2011)
B.S. Yilbas, A.Y. Al-Dweik, Short-pulse heating and analytical solution to non-equilibrium heating process. Phys. B Condens. Matter 417, 28–32 (2013)
B. Singh, Wave propagation in dual-phase-lag anisotropic thermoelasticity. Contin. Mech. Thermodyn. 25, 675–683 (2013)
B.S. Yilbas, Improved formulation of electron kinetic theory approach for laser short-pulse heating. Int. J. Heat Mass Transf. 49(13–14), 2227–2238 (2006)
S. Bin Mansoor, B.S. Yilbas, Radiative phonon transport in silicon and collisional energy transfer in aluminum films due to laser short-pulse heating: influence of laser pulse intensity on temperature distribution. Opt. Laser Technol. 44(1), 43–50 (2012)
J.M. Hayes, M. Kuball, Y. Shi, J.H. Edgar, Raman analysis of single crystalline bulk aluminum nitride: temperature dependence of the phonon frequencies. Mater. Res. Soc. Symp. Proc. 639, G6.38.1–G6.38.6 (2001)
L.-C. Liu, M.-J. Huang, Thermal conductivity modeling of micro- and nanoporous silicon. Int. J. Therm. Sci. 49(9), 1547–1554 (2010)
N. Donmezer, S. Graham, A multiscale thermal modeling approach for ballistic and diffusive heat transport in two dimensional domains. Int. J. Therm. Sci. 76, 235–244 (2014)
V.A. Yakovlev, N.N. Novikova, E.A. Vinogradov, S.S. Ng, Z. Hassan, H.A. Hassan, Strong coupling of sapphire surface polariton with aluminum nitride film phonon. Phys. Lett. A 373(27–28), 2382–2384 (2009)
I.J. Maasilta, L.J. Taskinen, J.T. Karvonen, Electron–phonon interaction in a thin Al–Mn film. Nucl. Instrum. Methods Phys. Res. Sect. A 559(2), 639–641 (2006)
Y.-Q. Li, Z.-R. Sun, Y.-F. Wang, Z.-G. Wang, Study on coherent phonons in aluminum film by interferometric probing technique. Acta Photon. Sin. 37(2), 256–259 (2008)
B.S. Yilbas, S. Bin Mansoor, Energy transport in silicon–aluminum composite thin film during laser short-pulse irradiation. Opt. Quant. Electron. 44(10–11), 437–457 (2012)
S. Bin Mansoor, B.S. Yilbas, Heat transfer across silicon–aluminum–silicon thin films due to ultra-short laser pulse irradiation. J. Enhanc. Heat Transf. 19(3), 259–270 (2012)
B.S. Yilbas, S. Bin Mansoor, Lattice phonon and electron temperatures in silicon–aluminum thin films pair: comparison of Boltzmann equation and modified two-equation model. Transp. Theory Stat. Phys. 42(1), 21–39 (2013)
B.S. Yilbas, S. Bin Mansoor, Phonon and electron transport in aluminum thin film: influence of film thickness on electron and lattice temperatures. Phys. B 407(24), 4643–4648 (2012)
A. Majumdar, Microscale heat conduction in dielectric thin films. J. Heat Transf. 115, 7–16 (1993)
R. Stedman, G. Nilsson, Dispersion relation for phonon in aluminum at 80 and 300 K. Phys. Rev. 145(2), 492–500 (1966)
A.C. Bouley, N.S. Mohan, D.H. Damon, The lattice thermal conductivity of copper and aluminum alloys at low temperatures. Therm. Conduct. 14, 81–88 (1976)
B.S. Yilbas, S. Bin Mansoor, Phonon transport in thin film: ballistic phonon contribution to energy transport. Numer. Heat Transf. Part A 64(10), 800–819 (2013)
B.S. Yilbas, S. Bin Mansoor, Frequency dependent phonon transport in two-dimensional silicon and diamond thin films. Mod. Phys. Lett. B 26. doi:10.1142/S0217984912501047 (2012)
Acknowledgments
The authors would like to acknowledge the support provided by the Deanship of Scientific Research (DSR) at King Fahd University of Petroleum and Minerals (KFUPM) for funding this work through Project No. RG1301.
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Appendix: Diffusive limit consideration
Appendix: Diffusive limit consideration
In the diffusion limit, when the Knudsen number Kn = Λ/L → 0 (where Λ is the mean free path and L is the film thickness), Eqs. (3) and (4) should reduce to the two-equation model. This is can be demonstrated as follows. Multiplying Eqs. (3) and (4) throughout by 2πμdμ and then integrating from −1 to 1, it yields,
and
However, the second term on the left-hand side needs some elaboration. In the diffusive limit, the behavior of I e,p(x, μ, t) is mainly linear in μ. This means that we may neglect the terms of order 2 or higher in the Taylor series expansion of I e,p(x, μ, t) in μ:
This is because, \( I_{\text{e,p}}^{o} \left( {x,t} \right) = \tfrac{1}{2}\int_{ - 1}^{1} {I_{\text{e,p}} \left( {x,\mu ,t} \right){\text{d}}\mu } \approx I_{\text{e,p}} \left( {x,0,t} \right) + \tfrac{1}{2}\left( {\int_{ - 1}^{1} {\mu \,{\text{d}}\mu } } \right)\left. {\frac{{\partial I_{\text{e,p}} }}{\partial \mu }} \right|_{\mu = 0} = I_{\text{e,p}} \left( {x,0,t} \right) \)
Then,
Since, \( \frac{{C_{\text{e,p}} v_{\text{e,p}} T_{\text{e,p}} }}{4\pi } = I_{\text{e,p}}^{o} \left( {x,t} \right) = \tfrac{1}{2}\int_{ - 1}^{1} {I_{\text{e,p}} \left( {x,\mu ,t} \right){\kern 1pt} {\text{d}}\mu } \), so that finally:
Equations (35) and (36) are now simplified to:
and
or,
and
The kinetic theory formula for the thermal conductivity is given as,
Hence, Eqs. (40) and (41) can be transformed into,
and
To eliminate \( q_{\text{p}}^{\prime \prime } \) and \( q_{\text{e}}^{\prime \prime } \) between Eqs. (41) and (43) as well as Eqs. (44), one can proceed as follows. After differentiating Eqs. (42) and (44) once with respect to x, it gives:
and
Now, substitute for \( \partial q_{\text{p}}^{\prime \prime } /\partial x \) and \( \partial q_{\text{e}}^{\prime \prime } /\partial x \) from Eqs. (41) and (42) into Eqs. (45) and (46), respectively, and simplify to obtain:
and
Noting that τ p = Λp/v p and τ e = Λe/v e are the relaxation times of the phonons and electrons, respectively, the above equations may be written as,
and
or,
and
It should be noted that when the overall time scale of the heat transfer process is much larger than the relaxation time, Eqs. (49) and (50) or Eqs. (51) and (52) can be further simplified to,
and
Equations (53) and (54) constitute the familiar of two-equation model [21].
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Ali, H., Yilbas, B.S. Effect of temperature oscillation on thermal characteristics of an aluminum thin film. Appl. Phys. A 117, 2143–2158 (2014). https://doi.org/10.1007/s00339-014-8635-5
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DOI: https://doi.org/10.1007/s00339-014-8635-5