Skip to main content
SpringerLink
Log in

Low-macroscopic field emission from nanocrystalline Al doped SnO2 thin films synthesized by sol–gel technique

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

We have observed low-macroscopic field electron emission from wide bandgap nanocrystalline Al doped SnO2 thin films deposited on glass substrates. The emission properties have been studied for different anode-sample spacings and for different Al concentrations in the films. The turn-on field and approximate work function were calculated and we have tried to explain the emission mechanism from this. The turn-on field was found to vary in the range 5.6–7.5 V/μm for a variation of anode sample spacing from 80–120 μm. The turn-on field was also found to vary from 4.6–5.68 V/μm for a fixed anode-sample separation of 80 μm with a variation of Al concentration in the films 8.16–2.31%. The Al concentrations in the films have been measured by energy dispersive X-ray analysis. Optical transmittance measurement of the films showed a high transparency with a direct bandgap ∼3.98 eV. Due to the wide bandgap, the electron affinity of the film decreased. This, along with the nanocrystalline nature of the films, enhanced the field emission properties.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R.L. Fink, Z. Li Tolt, Z. Yaniv, Surf. Coat. Technol. 570, 108 (1998)

    Google Scholar 

  2. C.A. Spindt, I. Brodie, L. Humphrey, E.R. Westerberg, J. Appl. Phys. 47, 5248 (1976)

    Article  ADS  Google Scholar 

  3. C.M. Lampert, Sol. Energ. Mater. 6, 1 (1981)

    Article  Google Scholar 

  4. J.R. Bellingham, W.A. Philips, C.J. Adkins, J. Mater. Sci. Lett. 11, 263 (1992)

    Article  Google Scholar 

  5. K. Omura, P. Veluchamy, M. Tsuji, T. Nishio, D. Murojono, J. Electrochem. Soc. 146, 2113 (1999)

    Article  Google Scholar 

  6. S.J. Laverty, H. Feng, P. Maguire, J. Electrochem. Soc. 144, 2165 (1997)

    Article  Google Scholar 

  7. K.L. Chopra, S. Major, D.K. Pandya, Thin Solid Films 102, 1 (1993)

    Article  Google Scholar 

  8. T. Nakahara, H. Koda, In: Chemical Sensor Technology, Vol. 3, ed. by N. Emazoe (Elsevier, New York, 1991), p. 19

  9. B. Orel, U.L. Stangar, J. Electrochem. Soc. 141, 127 (1994)

    Article  Google Scholar 

  10. V. Baranauskas, M. Fontana, Z.J. Guo, H.J. Ceragioli, A.C. Peterlevitz, Sens. Actuators B 107, 474 (2005)

    Article  Google Scholar 

  11. JCPDS powder Diffraction File card 5-0467

  12. S.B. Quadri, E.F. Skelton, D. Hsu, A.D. Dinsmore, J. Yang, H.F. Gray, B.R. Ratna, Phys. Rev. B 60, 9191 (1999)

    Article  ADS  Google Scholar 

  13. G. Cao, In: Nanostructure & Nanomaterials (Imperial College Press, London, UK, 2004), p. 330

  14. P.K. Ghosh, R. Maity, K.K. Chattopadhyay, Solar Energ. Mater. Solar Cells 81, 279 (2004)

    Article  Google Scholar 

  15. Optical Processes in Semiconductors ed. by J.I. Pankove (Prentice-Hall, 1971)

  16. C. Terrier, J.P. Chatelon, J.A. Roger, Thin Solid Films 295, 95 (1997)

    Article  Google Scholar 

  17. E.L. Murphy, R.H. Good, Phys. Rev. 102, 1464 (1956)

    Article  ADS  Google Scholar 

  18. R.G. Forbes, Ultramicroscopy 79, 11 (1999)

    Article  Google Scholar 

  19. R.G. Forbes, Proc. 4th Moscow Int. ITEP School of Physics ed. by A.L. Suvorov, Y.G. Abov, V.G. Firsov (Academprint, Moscow, 2001), p. 62

  20. Y.G. Baek, T. Ikuno, J.T. Ryu, S.I. Honda, M. Katayama, K. Oura, T. Hirao, Appl. Surf. Sci. 185, 243 (2002)

    Article  Google Scholar 

  21. K. Hirakuri, T. Yokoyama, H. Enomoto, N. Mutsukura, G. Friedbacher, J. Appl. Phys. 89, 8253 (2001)

    Article  ADS  Google Scholar 

  22. R.G. Forbes, Solid State Electron. 45, 779 2001

  23. J. Robertson, Diam. Relat. Mater. 5, 797 1996

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata, 700032, India

    Sk.F. Ahmed, P.K. Ghosh, S. Khan & K.K. Chattopadhyay

  2. Nanoscience and Technology Center, Jadavpur University, Kolkata, 700032, India

    M.K. Mitra & K.K. Chattopadhyay

Authors
  1. Sk.F. Ahmed
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P.K. Ghosh
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. Khan
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M.K. Mitra
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. K.K. Chattopadhyay
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to K.K. Chattopadhyay.

Additional information

PACS

81.20.Fw; 61.10.-i; 79.70.+q

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ahmed, S., Ghosh, P., Khan, S. et al. Low-macroscopic field emission from nanocrystalline Al doped SnO2 thin films synthesized by sol–gel technique. Appl. Phys. A 86, 139–143 (2007). https://doi.org/10.1007/s00339-006-3734-6

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-006-3734-6

Keywords

Search

Navigation