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On the morphological instability of silicon/silicon dioxide nanowires

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Abstract

Silicon–silicon dioxide core-shell nanowires grown on gold-coated silicon wafers by thermal evaporation of silicon monoxide sometimes show an oscillation in diameter. The two possible causes for this behaviour are a self-oscillation process during the growth or the so-called Rayleigh instability. By analyzing the thickness distribution of the nanowires, we will show that a self-oscillation process is responsible for the periodic instability during growth. In contrast, during post-growth etching and oxidation the nanowires can develop Rayleigh instabilities, leading to silicon nanocrystals embedded in silicon dioxide nanowire.

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Authors and Affiliations

  1. Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany

    F.M. Kolb, H. Hofmeister, M. Zacharias & U. Gösele

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  1. F.M. Kolb
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  2. H. Hofmeister
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  3. M. Zacharias
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  4. U. Gösele
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Correspondence to F.M. Kolb.

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61.46.+w; 81.10.-h; 81.40.-z

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Kolb, F., Hofmeister, H., Zacharias, M. et al. On the morphological instability of silicon/silicon dioxide nanowires. Appl. Phys. A 80, 1405–1408 (2005). https://doi.org/10.1007/s00339-004-3188-7

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  • DOI: https://doi.org/10.1007/s00339-004-3188-7

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