Abstract
We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-μm wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-μm material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 μm. The related radiative mechanisms in the 1.5-μm samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa: Jpn. J. Appl. Phys. 35, 1273 (1996)
I.A. Buyanova, W.M. Chen, B. Monemar: MRS Int. J. Nitride Semicond. Res. 6, 2 (2001)
J.S. Harris: Semicond. Sci. Technol. 17, 880 (2002)
H. Riechert, A. Ramakrishnan, G. Steinle: Semicond. Sci. Technol. 17, 892 (2002)
H.D. Sun, G.J. Valentine, R. Macaluso, S. Calvez, D. Burns, M.D. Dawson, T. Jouhti, M. Pessa: Opt. Lett. 27, 2124 (2002)
A.H. Clark, S. Calvez, N. Laurand, R. Macaluso, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa: IEEE J. Quantum Electron. QE-40 , 878 (2004); J.M. Hopkins, S.A. Smith, C.W. Jeon, H.D. Sun, D. Burns, S. Calveze, M.D. Dawson, T. Jouhti, M. Pessa: Electron. Lett. 40, 30 (2004)
M. Fisher, M. Reinhardt, A. Forchel: IEEE J. Sel. Top. Quantum Electron. 7, 149 (2001); M. Fisher, M. Reinhardt, A. Forchel: Electron. Lett. 36, 1208 (2002); D. Gollub, M. Fisher, A. Forchel: Electron. Lett. 38, 1183 (2002)
Y. Ikenaga, T. Miyamoto, S. Makino, T. Kayeyama, M. Arai, F. Koyama, K. Iga: Jpn. J. Appl. Phys. Part 1 41, 664 (2002)
M. Sopanen, H.P. Xin, C.W. Tu: Appl. Phys. Lett. 76, 994 (2000)
E. Tournié, M.-A. Pinault, M. Laügt, J.-M. Chau veau, A. Trampert, K.H. Ploog: Appl. Phys. Lett. 82, 1845 (2003)
P. Gilet, L. Grenouillet, P. Duvaut, P. Ballet, G. Rolland, C. Vannuffel, A. Million: J. Vac. Sci. Technol. B 19, 1422 (2001)
H.D. Sun, M.D. Dawson, M. Othman, J.C.L. Yong, J.M. Rorison, P. Gilet, L. Grenouillet, A. Million: Appl. Phys. Lett. 82, 376 (2003)
H.P. Xin, K.L. Kavanagh, Z.Q. Zhu, C.W. Tu: Appl. Phys. Lett. 74, 2337 (1999); H.P. Xin, K.L. Kavanagh, Z.Q. Zhu, C.W. Tu: J. Vac. Sci. Technol. B 17, 1649 (1999)
L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Duvaut, C. Vannuffel, A. Million, A. Chenevas-Paule: Appl. Phys. Lett. 76, 2241 (2000)
A. Kaschner, T. Lüttgert, H. Born, A. Hoffmann, A.Yu. Egorov, H. Riechert: Appl. Phys. Lett. 78, 1391 (2001)
M.A. Pinault, E. Tournié: Appl. Phys. Lett. 78, 1562 (2001)
R. Asomoza, V.A. Elyukhin, R. Pena-Sierra: Appl. Phys. Lett. 81, 1785 (2002)
P.R.C. Kent, A. Zunger: Phys. Rev. Lett. 86, 2613 (2001)
H.D. Sun, S. Calvez, M.D. Dawson, P. Gilet, L. Grenouillet, A. Million: unpublished
M.Y. Kong, X.L. Wang, D. Pan, Y.P. Zeng, J. Wang, W.K. Ge: J. Appl. Phys. 86, 1456 (1999)
I. Suemune, K. Uesugi, W. Walukiewicz: Appl. Phys. Lett. 77, 3021 (2000)
A. Polimeni, M. Capizzi, M. Geddo, M. Fisher, M. Reinhardt, A. Forchel: Phys. Rev. B 63, 195320 (2001)
J.M. Chauveau, A. Trampert, K.H. Ploog, M.A. Pinault, E. Tournié: J. Appl. Phys. 82, 3451 (2003)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
42.62.Fi; 78.55.Cr; 78.66.Fd; 78.67.De
Rights and permissions
About this article
Cite this article
Sun, H., Calvez, S., Dawson, M. et al. Photoluminescence characteristics of 1.5-μm Ga1-xInxNyAs1-y/GaAs structures grown by molecular beam epitaxy. Appl. Phys. A 80, 9–12 (2005). https://doi.org/10.1007/s00339-004-2985-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-004-2985-3