Abstract
This work aims to study the influence of Fe2O3 in ZnO/GO-based DSSC incorporating PAN-based gel electrolyte. ZnO–Fe2O3/GO thin films and gel electrolyte were prepared using the sol–gel technique via spin-coating and polymerization of polyacrylonitrile (PAN) methods, respectively. The insertion of Fe2O3 in ZnO/GO improved the open-circuit voltage and fill factor significantly. However, large amount of Fe2O3 (0.3%) inhibited the electron transport with high electron recombination rate (keff = 3044.62 s−1). The main reason for the low efficiency in ZnO–Fe2O3(0.3%)/GO is due to the energy band misalignment with the failure of the excited electron from the LUMO of dye into the conduction band of ZnO–Fe2O3(0.3%)/GO. The study found that the optimum concentration of Fe2O3 is 0.2% for an efficient DSSC. ZnO–Fe2O3(0.2%)/GO-based DSSC exhibited slow electron recombination of 0.751 s−1. Moreover, the fine nanoparticles of ZnO–Fe2O3(0.2%)/GO observed through field emission electron microscopy show a more porous structure that improved the short-circuit current density in DSSC.
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Acknowledgements
This work was fully supported by Universiti Kebangsaan Malaysia (Project No. FRGS/1/2019/STG07/UKM/02/11 and GUP-2018-097) and Photonic Technology Laboratory, Department of Electrical, Electronics and Systems Engineering, UKM for the facilities.
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Abdullah, H., Mahalingam, S., Abu Bakar, N.A. et al. Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell. Polym. Bull. 79, 4287–4301 (2022). https://doi.org/10.1007/s00289-021-03708-8
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DOI: https://doi.org/10.1007/s00289-021-03708-8