Abstract
We have investigated the effects of high magnetic fields on the microstructures and magnetic properties of Fe-Si-O films deposited by RF sputtering. Three typical sample appearances, hole-in-center, phase-separation and hybridization were obtained for the Fe-Si-O films prepared in the oxygen-argon flow ratioV O2/V total<1.0%, magnetic fieldB appl⩽1.0 T regime, indicating that not only the distribution of plasma but also the angular distribution of sputtered atoms are influenced by a high magnetic field. In the oxygen-argon flow ratioV O2/V total>2.0%, magnetic fieldB appl⩾2.0 T regime, strong (110) orientation of Fe3O4 grains and larger remanence and coercivity measured in the direction normal to the film plane appeared in the Fe-Si-O films. This result indicates that the high magnetic fields not only orient the Fe-Si-O film but also induce remarkable perpendicular magnetic anisotropy during the deposition.
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Bai, H., Mitani, S., Wang, Z. et al. Structures and magnetic properties of Fe-Si-O films RF-sputtered in a high magnetic field. Chin.Sci.Bull. 46, 466–470 (2001). https://doi.org/10.1007/BF03187257
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DOI: https://doi.org/10.1007/BF03187257