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Review of Ge detectors for gamma spectroscopy

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Abstract

A review is given of the use of germanium detectors for gamma spectroscopy. The advantages, principles of operation, and fabrication processes of semiconductor radiation detectors are described.

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References

  1. MacKay, K.G.,A germanium counter Phys. Rev. vol: 76 p. 1537, 1949.

    Article  Google Scholar 

  2. Mayer, J.W. and Gossick, B.,Use of Au−Ge broad area barriers as alpha-particle spectrometers Rev Sci. Intr. vol: 27 p. 407, 1956.

    Article  CAS  Google Scholar 

  3. Davis, W.D., J. Appl.Silicon crystal counters Phys. vol: 29, p. 231, 1958.

    CAS  Google Scholar 

  4. Airapetyants, A.V. and Ryvkin, S.M., Zh. Tekhn. Fiz. Vol: 27 p. 95, 1957.

    CAS  Google Scholar 

  5. Pell, E.M., J. Appl.Effect of Li-B ion pairing on Li+ ion drift in silicon Phys. Vol: 31 p. 1675, 1960.

    CAS  Google Scholar 

  6. Freck, D.V. and Wakefield J.,Gamma-ray spectrum obtained with a lithium-drifted p-i-n junction in germanium Nature. vol: 193, p. 669, 1962.

    Article  CAS  Google Scholar 

  7. Tavendale, A.J.,Large germanium lithium-drift p-i-n diodes for gamma-ray spectroscopy IEEE Trans. Nucl. Sci. vol: NS-12 No. 1 p. 255, 1965.

    Article  CAS  Google Scholar 

  8. Hall, R.N., Baertsch, R.D., Soltys, T.J. and Petrucco L.J., USAEC Contract No. AT (30-1) p. 3870, 1970.

  9. Eberhardt, J.E., Ryan, R.D. and Tavendale, A.J., Appl.Nuclear radiation detector from high-purity epitaxial n-GaAs Phys. Lett. vol: 17 No. 10 pp. 427–429 1970.

    CAS  Google Scholar 

  10. Baertsch, R.D. and Hall, R.N.,Gamma ray detectors made from high purity germanium IEEE Trans. Nucl. Sci. vol: NS-17 No 3 p. 235, 1970.

    Article  CAS  Google Scholar 

  11. Pehl, R.H., Cordi, R.C., and Goulding, F.S.,High-purity germanium: Detector fabrication and performance IEEE Trans Nucl. Sci. vol: NS-19 No 1 p. 265, 1972.

    Article  CAS  Google Scholar 

  12. Eberhardt, J.E. and Beech, A. McG.,Semiconductor X-ray spectrometer system type 454 AAEC-RE Report, to be published

  13. Shockley, W. Czech, J Phys. vol: B11 p. 81, 1961.

    CAS  Google Scholar 

  14. Drummond, W.E. and Moll, J.L.,Hot carriers in Si and Ge radiation detectors Appl. Phys. vol: 42 p. 5556, 1971.

    Article  CAS  Google Scholar 

  15. Ryan, R.D. Proceedings of the 1972 Nuclear Science Symposium, Miami Beach, 1972.

  16. Fano, U.,On the theory of ionization yield of radiation in different substances Phys. Rev. vol: 70, p. 44, 1946.

    Article  CAS  Google Scholar 

  17. Van Roosbroeck, W.,Theory of the yield and Fano factor of electron-hole pairs generated in semiconductors by high-energy particles Phys. Rev. vol: 139 p. A1702, 1965.

    Article  Google Scholar 

  18. Alkhazov G.D., Vorob’ev A.A. and Komar A.P.,Ionization fluctuations and resolution of ionization chambers and semiconductor detectors Nucl. Instr. Meth. vol. 48 p. 1, 1967.

    Article  CAS  Google Scholar 

  19. Pehl, R.H. and Goulding, F.S.,Recent observations of the Fano factor in germanium Nucl. Instr. Meth. vol: 81, p. 329, 1970.

    Article  CAS  Google Scholar 

  20. Eberhardt, J.E.,Fano factor in silicon at 90 K Nucl. Instr. Meth. vol: 80, p. 291, 1970.

    Article  CAS  Google Scholar 

  21. Eberhardt, J.E., Ryan, R.D., and Tavendale, A.J.,Evaluation of epitaxial n-GaAs for nuclear radiation detectors Nucl. Instr. Meth. vol: 94, p. 463, 1971.

    Article  CAS  Google Scholar 

  22. Mayer, J.W, Matrtini, M., Zanio K.R. and Fowler, I.L.,Influence of trapping and detrapping effects in Si(Li), Ge(Li) and CdTe detectors IEEE Trans. Nucl. Sci. vol: NS-17 p. 221, 1970.

    Article  CAS  Google Scholar 

  23. Alexiev, D., Butcher, K.S.A. Williams, A.A., JGamma-ray detectors from thermally annealed Bridgman-grown CdTe Crystal Growth. vol: 142 pp. 303–309, 1994.

    Article  CAS  Google Scholar 

  24. Alexiev, D., Butcher, K.S.A., Boldeman, J.W.,A neutron damage study of liquid phase epitaxial GaAs and high purity silicon Nucl. Instr. Meth. vol: B95 pp. 355–370, 1995.

    Article  Google Scholar 

  25. Butcher, K.S.A. Mo Li, Alexiev, D., Tansley, T.L., J.Growth of high purity liquid phase epitaxial GaAs in a silica growth system Crystal Growth. vol. 156, pp. 361–367, 1995.

    Article  CAS  Google Scholar 

  26. Grant, S.M., Sumner, T.J., Warren, J.P., Alexiev, D., and Butcher, K.S.A.,LPE GaAs as an X-ray detector for astronomy Proceedings of the SPIE, 2006 pp. 41-51, 1994.

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Alexiev, D., Reinhard, M.I., Mo, L. et al. Review of Ge detectors for gamma spectroscopy. Australas. Phys. Eng. Sci. Med. 25, 102–109 (2002). https://doi.org/10.1007/BF03178770

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  • DOI: https://doi.org/10.1007/BF03178770

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