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New approach to the preparation of GaAs oxide films utilizing an ultrathin Sm overlayer

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Czechoslovak Journal of Physics Aims and scope

Abstract

The effect of an ultrathin (≤1.5 nm) Sm overlayer on the kinetics of the plasma anodic oxidation process of GaAs is investigated. Oxidation of Sm/GaAs structures proceeded ≈10 times faster compared to a free GaAs surface. SIMS analysis showed that the oxide layer is contamined by Sm up to the oxide/semiconductor interface. A fitting procedure applied to the growth kinetics revealed two aspects of using the Sm overlayer: an increase in both the oxygen migration coefficient in the oxide and the concentration of O− ions on the dielectric surface during the oxidation procedure.

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Authors and Affiliations

  1. Institute of Physics, Slovak Acad. Sci., Dúbravská cesta 9, 842 28, Bratislava, Slovakia

    E. Pinčík, V. Nádaždy, M. Wolcyrz, J. Kocanda, M. Jergel & Š. Lányi

  2. Institute of Low Temp. and Struct. Research, Polish Acad. Sci., Wrocław, Poland

    M. Wolcyrz & J. Kocanda

Authors
  1. E. Pinčík
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  2. V. Nádaždy
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  3. M. Wolcyrz
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  4. J. Kocanda
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  5. M. Jergel
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  6. Š. Lányi
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Pinčík, E., Nádaždy, V., Wolcyrz, M. et al. New approach to the preparation of GaAs oxide films utilizing an ultrathin Sm overlayer. Czech J Phys 43, 997–1001 (1993). https://doi.org/10.1007/BF01595292

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  • DOI: https://doi.org/10.1007/BF01595292

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