Abstract
By solving for the potential barrier profile in metal-amorphous silicon contacts using an exponential distribution of the density of states in the energy spectrum mobility gap, we compute the voltage-current characteristics of such contacts taking into account tunneling through the space charge region. We demonstrate that as the density of states in the middle of the mobility gap increases, such tunneling leads to significant changes in the rectifying properties of a metal-amorphous silicon contact.
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I. Chen and S. J. Lee, J. Appl. Phys.,53, No. 2, 1045 (1982).
V. V. Il'chenko and V. I. Strikha, Fiz. Tekh. Poluprovodn.,18, No. 5, 873 (1984).
A. A. Andreev, O. A. Golikova, et al., Fiz. Tekh. Poluprovodn.,18, No. 2, 373 (1984).
A. I. Snell, K. D. Mackenzie, et al., J. Non-Cryst. Solids,35–36, No. 1, 593 (1980).
Ya. R. Soronevich, V. I. Strikha, and D. I. Sheka, in: Semiconductor Technology and Microelectronics [in Russian], Naukova Dumka, Kiev (1973), p. 51.
V. V. Il'chenko and V. I. Strikha, Vestnik Kiev Univ., Fiz., No. 24, 99 (1983).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 3–7, November, 1986.
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Strikha, V.I., Il'chenko, V.V. Tunneling through the space charge region in a metal-amorphous silicon contact. Soviet Physics Journal 29, 865–868 (1986). https://doi.org/10.1007/BF00898435
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DOI: https://doi.org/10.1007/BF00898435