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II–VI semiconductor alloy films: Cd1−xZnxTe

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Abstract

Electrical conductivity and optical properties of undoped and copper-doped Cd1−xZnxTe (0.1<x<0.8) films prepared by the two-zone hot-wall technique, were measured at temperatures of 95–550 K. Copper-doped films showed an indirect transition at ∼1.54 eV. It was observed that the grain-boundary scattering played an important role on the electron transport properties of the films. Increased doping dose culminated in segregation of dopant (copper) at the grain boundaries. The grains were partially depleted with filled traps and the trap states lay below the Fermi level.

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Authors and Affiliations

  1. Department of Materials Science, Indian Association for the Cultivation of Science, 700032, Calcutta, India

    P. Gupta, K. K. Chattopadhyay, S. Chaudhuri & A. K. Pal

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  1. P. Gupta
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  2. K. K. Chattopadhyay
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  3. S. Chaudhuri
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  4. A. K. Pal
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Gupta, P., Chattopadhyay, K.K., Chaudhuri, S. et al. II–VI semiconductor alloy films: Cd1−xZnxTe. JOURNAL OF MATERIALS SCIENCE 28, 496–500 (1993). https://doi.org/10.1007/BF00357829

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  • DOI: https://doi.org/10.1007/BF00357829

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