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Quantum dots for GaAs-based surface emitting lasers at 1300 nm

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Advances in Solid State Physics 40

Part of the book series: Advances in Solid State Physics ((ASSP,volume 40))

Abstract

InGaAs quantum dots (QD's) on GaAs substrate have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for the use in vertical cavity surface emitting laser diodes. Similar recombination spectra are obtained by employing the two different approaches of seeding and overgrowth with a quantum well. Despite the shift to larger wavelengths a large separation (=80 meV) between excited states is maintained. The introduction of such QD's into a vertical cavity leads to strong narrowing of the emission spectrum. Lasing from a 1300 nm InGaAs quantum dot VCSEL is reported.

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Authors and Affiliations

  1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrae 36, D-10623, Berlin, Germany

    M. Grundmann, N. N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth & D. Bimberg

  2. A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia

    V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, Yu. G. Musikhin & Zh. I. Alferov

  3. Air Force Institute of Technology, Wright-Patterson AFB, Ohio, USA

    J. A. Lott

  4. Max-Planck-Institut fr Mikrostrukturphysik, Weinberg 2, D-06120, Halle/S

    N. D. Zhakharov & P. Werner

Authors
  1. M. Grundmann
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  2. N. N. Ledentsov
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  3. F. Hopfer
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  4. F. Heinrichsdorff
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  5. F. Guffarth
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  6. D. Bimberg
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  7. V. M. Ustinov
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  8. A. E. Zhukov
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  9. A. R. Kovsh
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  10. M. V. Maximov
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  11. Yu. G. Musikhin
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  12. Zh. I. Alferov
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  13. J. A. Lott
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  14. N. D. Zhakharov
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  15. P. Werner
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Editor information

Bernhard Kramer

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© 2000 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Grundmann, M. et al. (2000). Quantum dots for GaAs-based surface emitting lasers at 1300 nm. In: Kramer, B. (eds) Advances in Solid State Physics 40. Advances in Solid State Physics, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108381

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  • DOI: https://doi.org/10.1007/BFb0108381

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-41576-3

  • Online ISBN: 978-3-540-44560-9

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