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Festkörperprobleme

  • Book
  • © 1988

Overview

Editors:
  1. U. Rössler
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Part of the book series: Advances in Solid State Physics (ASSP, volume 28)

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Table of contents (8 chapters)

  1. Front Matter

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  2. Charge-induced structural relaxation in hydrogenated amorphous silicon

    • Martin Stutzmann
    Pages 1-20

  3. Magnetooptics of two-dimensional electrons under the conditions of integral and fractional quantum hall effect in Si-MOSFETs and GaAs-AlGaAs single heterojunctions

    • Igor Kukushkin, Vladislav Timofeev, Klaus von Klitzing, Klaus Ploog
    Pages 21-43

  4. Microwave investigations of the quantum hall effect in GaAs/AlGaAs heterostructures

    • Friedl Kuchar
    Pages 45-62

  5. Recent developments in the theory of highly excited semiconductors

    • Wilfried Schäfer
    Pages 63-85

  6. The development of a 4 Mbit DRAM

    • Willy Beinvogl, Erwin Hopf
    Pages 87-98

  7. Fabrication and optical spectroscopy of ultra small III–V compound semiconductor structures

    • Alfred Forchel, Helmut Leier, Bernd E. Maile, Roland Germann
    Pages 99-119

  8. Quasi-One-Dimensional electron systems on GaAs/AlGaAs heterojunctions

    • Wolfgang Hansen
    Pages 121-140

  9. On the theory of high Tc superconductors

    • Werner Weber
    Pages 141-162

  10. Back Matter

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Keywords

Bibliographic Information

  • Book Title: Festkörperprobleme

  • Editors: U. Rössler

  • Series Title: Advances in Solid State Physics

  • DOI: https://doi.org/10.1007/BFb0107844

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Fachmedien Wiesbaden 1988

  • eBook ISBN: 978-3-540-75352-0Published: 01 October 2007

  • Series ISSN: 1438-4329

  • Series E-ISSN: 1617-5034

  • Edition Number: 1

  • Number of Pages: VI, 178

  • Topics: Condensed Matter Physics

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