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GaAs/GaAlAs multilayer structures grown by LPE method

  • Condensed Matter
  • Published:
Acta Physica Hungarica

Abstract

Multilayer LPE of GaAs and GaAlAs using a vertical system with rotary graphite crucible has been developed. Using this equipment superlattice structures in the GaAs-GaAlAs system were grown. The layer thicknesses were varied from 20 to 500 nm. Structures up to 100 layers were deposited using constant cooling rate and step-cooling LPE methods; the growth times varied for an individual layer in the range of 1 to 50 s. It was observed that calculating the respective growth rates and layer thicknesses the experimental values differed to a great extent from the calculated data showing the insufficiency of the diffusion limited growth rate theories in our case. The doping of the multilayer structures with Si, Ge and Sn was also studied. Anomalous growth rates depending on the dopant quality were observed.

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Authors and Affiliations

  1. Research Institute for Technical Physics of the HAS, 1325, Budapest, Hungary

    T. Görög, E. Lendvay & V. Rakovics

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  1. T. Görög
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  2. E. Lendvay
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  3. V. Rakovics
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Görög, T., Lendvay, E. & Rakovics, V. GaAs/GaAlAs multilayer structures grown by LPE method. Acta Physica Hungarica 61, 149–152 (1987). https://doi.org/10.1007/BF03155878

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