Abstract
Two traps with activation energies ofE c – 0·47 eV andE v + 0·79 eV have been detected in semi-insulating GaAs:Cr through optical transient current spectroscopy (otcs) in the temperature range 300–450 K. The latter trap gives rise to rising current transients which result in a negative peak in theotcs spectrum. The theoretical expressions for current transients have been derived.
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References
Deveaud B and Toulouse B 1980Semi-insulating III-V materials (conference), Nottingham (ed.) G J Rees (Kent: Shiva Publishers) pp. 241
Lang D V and Logan R A 1975.J. Electron. Mater. 4 1053
Martin G M and Bois D 1978Electrochem. Soc. 78 32
Martin G M, Mitonneau A, Pons D, Mircea A and Woodard D W 1980J. Phys. C13 3855
Rose A 1963Concepts in photoconductivity and allied problems (New York: John Wiley)
Sah C T, Forbes L, Rosier L L and Tasch A F Jr 1970Solid State Electron. 13 759
Szawelska H R and Allen J W 1979J. Phys. C12 3359
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Mohapatra, Y.N., Balasubramanyam, N. & Kumar, V. Characterization of deep levels in semi-insulating gallium arsenide. Bull. Mater. Sci. 7, 57–61 (1985). https://doi.org/10.1007/BF02744259
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DOI: https://doi.org/10.1007/BF02744259