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Double-level copper interconnections using selective copper CVD

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Abstract

Selective copper CVD technique involving hydrogen reduction of hexafluoro acetylacetonate copper has been used to fill vias for fabricating double-level copper interconnect structure. The surface morphology of selectively deposited copper on copper substrate of the via bottom depends strongly on via opening process. A two-step via opening process consisting of an reactive ion etching of the insulating interlayer and a wet removal of the interlayer metal results in smooth copper plug formation by CVD. Double-level copper interconnect structures have been fabricated using this technique and a via resistance as low as 100 mΩ has been obtained for a 1 μ diameter via.

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Awaya, N., Arita, Y. Double-level copper interconnections using selective copper CVD. J. Electron. Mater. 21, 959–964 (1992). https://doi.org/10.1007/BF02684203

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  • DOI: https://doi.org/10.1007/BF02684203

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