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Evaluation of binary and ternary melts for the low temperature liquid phase epitaxial growth of silicon

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Abstract

Liquid-phase-epitaxy allows the growth of good quality layers at low temperature, although this advantage is yet to be fully exploited for silicon. Silicon solubility was investigated in a range of binary and ternary metal alloys to identify suitable low temperature combinations. Gold based alloys were determined to be the most suitable for the growth of lightly doped layers, with Au-Bi and Au-Pb alloys giving high silicon solubilities at temperatures below 400° C. Liquid-phase-epitaxy of silicon was demonstrated over the 380–450° C range from such alloys.

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Authors and Affiliations

  1. Centre for Photovoltaic Devices and Systems, University of New South Wales, 2033, Kensington, Australia

    Soo Hong Lee & Martin A. Green

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  1. Soo Hong Lee
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  2. Martin A. Green
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Lee, S.H., Green, M.A. Evaluation of binary and ternary melts for the low temperature liquid phase epitaxial growth of silicon. J. Electron. Mater. 20, 635–641 (1991). https://doi.org/10.1007/BF02669529

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  • DOI: https://doi.org/10.1007/BF02669529

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