Skip to main content
SpringerLink
Log in

Metal-semiconductor contacts to n-ZnS0.07Se0.93

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

A systematic study was conducted on electrical properties of metal-semiconductor contacts to n-ZnS0.07Se0.93 with metals of different metal work functions. A clear relation was found between the Schottky barrier height and the metal work function although the Schottky contact theory could not predict it accurately. Thermionic-emission was found to be the dominant current transport mechanism. A significant Schottky barrier height improvement was achieved by means of a cryogenic process technique for forming the Au/n-ZnS0.07Se0.93 contact. A thermal stability study was also conducted on Pd and Au/n-ZnS0.07Se0.93 contacts. Thermal annealing tests showed a stable electrical property up to T = 250°C for the Pd contact and T = 150°C for the Au contact, however, a dramatic degradation was observed after higher temperature annealing and this is attributed to the interaction between metals and ZnSSe after annealing as supported by Auger electron spectroscopy.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J. Gutowski,N. Presser and G. Kudlek,Phys. Stat. Sal. (a) 11, 120, (1990).

    Google Scholar 

  2. K.P. O’Donnell and B. Henderson,J. Luminescence 52, 133 (1992).

    Article  CAS  Google Scholar 

  3. T. Marshall,Phys. B 185, 433 (1993).

    Google Scholar 

  4. A. Haase, H. Cheng, D.K. Kisemer, T.A. Strand and J.M. DePuydt,Appl. Phys. Lett. 59 (25), 3228 (1991).

    Article  CAS  Google Scholar 

  5. M. Vos, F. Xu, S.G. Anderson, J.H. Weaver and H. Cheng,Phys. Rev. B 39 (15), 10744 (1989).

    Google Scholar 

  6. Uemoto, A. Kamata, H. Mitsuahshi, K. Hirahara and T. Beppu,J. Cryst. Growth 99 (1–4), 422 (1990).

    Article  CAS  Google Scholar 

  7. Y. Kuyada, I. Suemune, M. Fujimuto, Y. Fujii, N.Otsukaand Y. Nakaura,J. Appl. Phys. 72 (7), 3029 (1992).

    Article  Google Scholar 

  8. Unpublished.

  9. Z.Q. Shi, Ph.D Dissertation, SUNY at Buffalo (1992).

  10. A.Z.H. Wang, W.A. Anderson and M.A. Haase,J. Appl. Phys. 77 (7), 3513, (1995).

    Article  CAS  Google Scholar 

  11. A.Z.H. Wang and W.A. Anderson,Appl. Phys. Lett. 66 (15), 1963 (1995).

    Article  CAS  Google Scholar 

  12. S.M. Sze,Physics of Semiconductor Devices, 2nd. Ed. (New York: John Wiley & Sons, 1981).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical & Computer Engineering, Center for Electronic & Electro-Optic Materials, State University of New York at Buffalo, 14260, Bonner Hall, Amherst, NY

    Albert Wang & Wayne A. Anderson

Authors
  1. Albert Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Wayne A. Anderson
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wang, A., Anderson, W.A. Metal-semiconductor contacts to n-ZnS0.07Se0.93 . J. Electron. Mater. 25, 201–205 (1996). https://doi.org/10.1007/BF02666244

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02666244

Key words

Search

Navigation