Abstract
Si- and Mg-ions with energies of 180 keV have been implanted into semi-insulating InP substrates and low doped n- and p-type GalnAs epitaxial layers (3 · l016cm−3). Sheet resistances and doping profiles are analyzed and compared with LSS theory. Post-implantation annealing is studied with respect to encapsulation, time and temperature. We have tested as new encapsulation techniques for InP the simple proximity cap annealing and for GalnAs the As-doped spun-on SiO2. Proximity cap annealing yields decomposition-free surfaces when using a recessed capsubstrate. At annealing temperatures of around 800 °C less activation is obtained than with conventional PSG annealing and a surface accumulation of charge-carriers is established. A time limit of around 3 min is found for Si- and Mg-implanted InP, beyond which the sheet resistance no longer decreases and the doping saturates. For Si in InP, short-time annealing yields to a 68 % activation of carriers, not significantly higher than with conventional long-time annealing. In the case of Si in GalnAs, however, short-time annealing is much more effective. A 100 % activation is obtained for a dose of 2.1014 cm−2, while only 7 % is found for long annealing. Even at such a high dose of 1. 1016cm−2 we have achieved about an order of magnitude higher activation with short annealing than with long annealing.
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König, U., Hilgarth, J. & Tiemann, H.H. Si- and Mg-implanted InP, GaInAs and short-time proximity cap annealing. J. Electron. Mater. 14, 311–327 (1985). https://doi.org/10.1007/BF02661225
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DOI: https://doi.org/10.1007/BF02661225