Abstract
The temperature dependence in the range 77–400 K of the carrier concentration, resistivity and mobility of a series of n and p-type single crystal, liquid-phase epitaxial layers of Ga1−xAlxAs are presented. These layers were doped, n-type with tellurium, and p-type with germanium to yield carrier concentrations in the range 1017 – 1018cm−3 at 295 K. Donor and acceptor ionization energies, εD and εA, are derived from the data. The dependence of εD on alloy composition is interpreted in terms of the known band structure variation in the alloy system.
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H.C. Casey, Jr.,.B. Panish and K.B. Wolfstirn, J. Phys. Chem. Solids32, 571 (1971).
F.E. Rosztoczy, F. Ermanis, I. Hayashi and B. Schwartz, J. Appl. Phys.41, 264 (1970).
.E. Rosztoczy and K.B. Wolfstirn, J. Appl. Phys.42, 426 (1971).
J. Vilms and J.P. Garrett, Solid-State Electronics15, 443 (1972).
M. Ishii, T. Sogo, T. Tanaka and T. Oku, Mitsubishi Denki Laboratory Reports11, 157 (1970).
K.K. Shih and G.D. Pettit, J. Electronic Mater.3, 391 (1974).
J.C. Dyment, F.P. Kapron and A.J. SpringThorpe, Proceedings of the V international conference on GaAs and related compounds, Deauville, France (1974) To be published.
M.B. Panish, J. Appl. Phys.44, 2667 (1973).
C.S. Kang and P.E. Greene, Proceedings of IInd international symposium on GaAs and related compounds, Dallas, Texas. Published by the Institute of Physics (1969) p.18.
H.C. Casey, Jr., and M.B. Panish, J. Appl. Phys.40, 4910 (1969).
O. Berolo and J.C. Woolley, Can. J. Phys.49, 1335 (1971).
N. Holonyak, Jr., C.J. Neuse, M.D. Sirkis and G.E. Stillman, Appl. Phys. Lett.8, 83 (1966).
M.G. Craford, G.E. Stillman, J.A. Rossi and N. Holonyak Jr., Phys. Rev.168, 867 (1968).
B.I. Miller, E. Pinkas, I. Hayashi and R.J. Capik J. Appl. Phys.43, 2817 (1972).
M. Ilegems and G.L. Pearson, Proceedings of IInd international symposium on GaAs and related compounds, Dallas, Texas. Published by the Institute of Physics (1969) p.3.
M.B. Panish, J. Less Common Metals10, 416 (1966).
N.G.E. Johansson, J.W. Mayer and O.J. Marsh, Solid State Electronics13, 317 (1970).
M. Ettenberg, A.G. Sigai, A. Dreeben and S.L. Gilbert, J. Electrochem. Soc.118, 1355 (1971).
A.R. Hutson, Phys. Rev.108, 222 (1957).
G.D. Pitt, J. Phys. C. Solid State Phys.6, 1586 (1973).
B. Monemar, Phys Rev. B8, 5711 (1973).
M.R. Lorenz, R. Chicotka and G.D. Pettit, Solid State Communications8, 693 (1970).
D.J. Stukel and R.N. Euwema, Phys. Rev.188 1193 (1969).
E. Hess, I. Topul, K.R. Schulze, H. Neumann and K. Unger, Phys Stat. Sol. (b)55, 187 (1973).
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SpringThorpe, A.J., King, F.D. & Becke, A. Te and Ge — doping studies in Ga1−xAlxAs. J. Electron. Mater. 4, 101–118 (1975). https://doi.org/10.1007/BF02657839
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DOI: https://doi.org/10.1007/BF02657839