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The effect of trimethylaluminum concentration on the incorporation of P In AlxGa1−xPyAs1−y grown by organometallic vapor phase epitaxy

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Abstract

The organometallic vapor phase epitaxial (OM-VPE) growth of AlxGa1-xPyAs1-y on graded GaPyAs1-yGaAs in the compositional range 0 < x < 0.9 and 0 < y < 0.6 is reported. It is found that composition control can be easily achieved, and that the vapor phase ratio of trimethylaluminum to trimethylgallium strongly influences the incorporation of P in the solid. A model is developed which explains this in terms of competing reaction rates. The model gives a good fit to the experimental data.

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Authors and Affiliations

  1. Inc. Solid State Laboratory, 611 Hansen Way, 94303, Palo Alto, CA

    M. J. Ludowise (Varian Associate) & W. T. Dietze (Varian Associate)

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  1. M. J. Ludowise
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  2. W. T. Dietze
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Ludowise, M.J., Dietze, W.T. The effect of trimethylaluminum concentration on the incorporation of P In AlxGa1−xPyAs1−y grown by organometallic vapor phase epitaxy. J. Electron. Mater. 11, 59–73 (1982). https://doi.org/10.1007/BF02654609

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  • DOI: https://doi.org/10.1007/BF02654609

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