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Characterization of GaAs epitaxial layers grown in a radiation heated Mo-CVD reactor

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Abstract

A new system to grow single crystal epilayers by metal organic chemical vapor deposition is presented. The graphite susceptor is heated by a 750 W quartz-halogen lamp. To focus the light onto the backside of the susceptor an elliptical mirror is used. With this system epilayers of good quality on GaAs are grown down to 600°C. The morphology, background doping and mobility as a function of growth conditions is shown. Highly doped layers are grown with H2Se and DEZn (Diethylzinc).

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Authors and Affiliations

  1. Institute of Semi conductor Electronics, Aachen Technical University, Templergraben 55, D-5100, Aachen, FRG

    H. Beneking, A. Escobosa & H. Kräutle

Authors
  1. H. Beneking
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  2. A. Escobosa
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  3. H. Kräutle
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Beneking, H., Escobosa, A. & Kräutle, H. Characterization of GaAs epitaxial layers grown in a radiation heated Mo-CVD reactor. J. Electron. Mater. 10, 473–480 (1981). https://doi.org/10.1007/BF02654586

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  • DOI: https://doi.org/10.1007/BF02654586

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