Abstract
Erbium impurities were implanted in indium phosphide. The 2 K, 77 K and 300 K photoluminescence spectra show, after annealing at high temperature, the main erbium emission centered at 1.536μm. The variation of this Er-peak luminescence is studied as a function of the implanted dose, the annealing temperature and the annealing duration.
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Rochaix, C., Rolland, A., Favennec, P.N. et al. Behaviour of erbium implanted in InP. J. Electron. Mater. 17, 351–354 (1988). https://doi.org/10.1007/BF02652117
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DOI: https://doi.org/10.1007/BF02652117