Abstract
Silicon-germanium epitaxial layers have been grown on (100) silicon at 750° C by very low pressure chemical vapor deposition (VLPCVD). Pure SiH4 and GeH4 were used as the processing gases. Commensurate films of Si1-x withx < 0.13 have been deposited up to a critical thickness about 2-4 times larger than the equilibrium value. Interrupted growth, controlled by gas switching, was employed to improve interfacial abruptness. The films have been characterized as a function of SiH4 and GeH4 flow rates and germanium content. Growth rate and germanium incorporation as a function of GeH4:SiH4 input ratio and total gas flow rate have been studied. We observed that the growth rate of the Si1-x Ge x layer decreases as the germanium content in the film or the GeH4:SiH4 ratio increases at 750° C using VLPCVD. We also found that, for a given GeH4:SiH4 ratio, the germanium incorporated in the solid is independent of the total gas flow rate.
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Jang, S.M., Tsai, C. & Reif, R. Growth of epitaxial Si1-xGex layers at 750° C by VLPCVD. J. Electron. Mater. 20, 91–95 (1991). https://doi.org/10.1007/BF02651970
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DOI: https://doi.org/10.1007/BF02651970