Summary
We discuss some specific properties of self-organized InAs-GaAs quantum dots grown by Molecular Beam Epitaxy. We report on the optical spectra obtained under resonant excitation, where both a Raman contribution and a resonant emission of the dots are evidenced. We show that the emission of single dots can easily be isolated by processing measas on samples with a graded indium content, and finally discuss the temporal and temperature behaviour of the emission.
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Marzin, J.Y., Gerard, J.M., Cabrol, O. et al. «Self-organized» InAs/GaAs quantum dots. Il Nuovo Cimento D 17, 1285–1293 (1995). https://doi.org/10.1007/BF02457200
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DOI: https://doi.org/10.1007/BF02457200