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Positron annihilation study on nanometer cavities in porous silicon

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Abstract

Measurements were carried out on the positron lifetime and the Doppler broadening of its annihilation radiation in porous silicon. A very long lifetime of a few tens of nanoseconds was found. TheS parameter increased upon annealing in vacuum at 350 °C. It is pointed out that positron/positronium spectroscopy is very useful for the study of physical and chemical properties of porous silicon.

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Authors and Affiliations

  1. The Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, 351-01, Saitama, Japan

    Y. Itoh

  2. Department of Physics, Faculty of Education, Tokyo Gakugei University, Koganei-shi, 184, Tokyo, Japan

    H. Murakami

  3. Faculty of Science and Engineering, Tokyo Denki University, Hatoyama, 350-03, Saitama, Japan

    A. Kinoshita

Authors
  1. Y. Itoh
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  2. H. Murakami
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  3. A. Kinoshita
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Itoh, Y., Murakami, H. & Kinoshita, A. Positron annihilation study on nanometer cavities in porous silicon. Hyperfine Interact 84, 121–126 (1994). https://doi.org/10.1007/BF02060651

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  • DOI: https://doi.org/10.1007/BF02060651

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