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Determination of the concentrations of trace and doping elements in GaAs by neutron activation analysis

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Abstract

The concentrations of ten trace and dopant elements in GaAs semiconductor were determined by reactor neutron activation analysis after removal of As by evaporation of AsCl3. The retentions of the elements of interest were measured using radiotracers. The concentrations of doping elements (Te, Cr and Zn) in commercial GaAs samples were compared to the limit of detection of these elements to analyze the possibility to use NAA for concentration depth profiling measurements. The NAA results were compared with those of electrical measurements and SIMS and the discrepancies found are discussed.

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Author notes

  1. Z. B. Alfassi

    Present address: Department of Nuclear Engineering, Ben Gurion University, 84102, Beer Sheva, Israel

Authors and Affiliations

  1. Institute of Nuclear Science, National Tsing Hua University, 30043, Hsinchu, Taiwan (R.O.C.

    R. S. Liu, P. Y. Chen, Z. B. Alfassi & M. H. Yang

Authors
  1. R. S. Liu
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  2. P. Y. Chen
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  3. Z. B. Alfassi
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  4. M. H. Yang
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Liu, R.S., Chen, P.Y., Alfassi, Z.B. et al. Determination of the concentrations of trace and doping elements in GaAs by neutron activation analysis. Journal of Radioanalytical and Nuclear Chemistry, Articles 141, 317–326 (1990). https://doi.org/10.1007/BF02035799

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  • DOI: https://doi.org/10.1007/BF02035799

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