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Morphological structure of bismuth-doped n-type amorphous germanium sulphide semiconductors

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Physics, Maharshi Dayanand University, 124001, Rohtak, India

    K. L. Bhatia & D. P. Gosain

  2. Instrumentation and Services Unit, Indian Institute of Science, 560 012, Bangalore, India

    G. Parthasarathy & E. S. R. Gopal

Authors
  1. K. L. Bhatia
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  2. D. P. Gosain
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  3. G. Parthasarathy
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  4. E. S. R. Gopal
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Bhatia, K.L., Gosain, D.P., Parthasarathy, G. et al. Morphological structure of bismuth-doped n-type amorphous germanium sulphide semiconductors. J Mater Sci Lett 5, 1281–1284 (1986). https://doi.org/10.1007/BF01729393

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  • DOI: https://doi.org/10.1007/BF01729393

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