Skip to main content
SpringerLink
Log in

Investigation of silicon wafering by wire EDM

  • Papers
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

The new technology of silicon wafering by wire electrodischarge machining (EDM) was investigated to determine its mechanism of current-conducting and material removal. Target materials were n-type single-crystal silicon ingots with the resistivity of 7–15 cmΩ. It was found that the surface potential barrier of the semiconductors had a dominating effect on EDM cutting speed. Technological experiments were performed to determine the correlation between cutting speed and machining parameters. The machined surfaces were examined by scanning electron microscopy and X-ray energy dispersive spectrometer to test the surface finish and surface impurity. The results obtained show that the technique is effective for silicon wafering.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. W. Koenig, D. F. Dauw, G. Levy andV. Panten,Ann. CIRP Tokyo 37 (1988) 625.

    Google Scholar 

  2. M, Ramulu andM. Taya,J. Mater. Sci. 24 (1989) 1103.

    Google Scholar 

  3. E. H. Rhoderick, “Metal-Semiconductor Contacts” (Clarendon Press, Oxford, 1978).

    Google Scholar 

  4. H. E. deBruyn,Ann. CIRP 16 (1968) 183.

    Google Scholar 

  5. D. F. Dauw, PhD thesis, K. V. Leuven (1985).

  6. Niels Jacksen,Solid State Technol. July,107 (1985).

  7. C. F. Noble, A. J. Ajmal andA. J. Green, International Symposium of Electromachining ISEM-7, Birmingham, UK (1983) pp. 304–12.

  8. D. S. Lim andS. Danyluk,J. Mater. Sci. 20 (1985) 4048.

    Google Scholar 

  9. H. K. Toenshoff, W. V. Schmieden, I. Inasaki, W. Koenig andG. Spur,Ann. CIRP 39 (1990) 621.

    Google Scholar 

  10. T. S. Kuan et al, J. Electrochem. Soc. 127 (1980) 1387.

    Google Scholar 

  11. R. L. Meek andM. C. Huffstuttler,ibid. 116 (1969) 893.

    Google Scholar 

  12. Heinzk K. Henisch, “Semiconductor Contacts” (Clarendon Press, Oxford, 1984).

    Google Scholar 

  13. M. L. Jeswani,Wear 51 (1978) 227.

    Google Scholar 

  14. D. F. Dauw, C. A. Brown, J. P. Griethuysen andJ. F. L. M. Albert,Ann. CIRP 39 (1990) 161.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Mechanical Engineering, Zhejiang University, 310027, Hangzhou, People's Republic of China

    Y. F. Luo, C. G. Chen & Z. F. Tong

Authors
  1. Y. F. Luo
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. C. G. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Z. F. Tong
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Luo, Y.F., Chen, C.G. & Tong, Z.F. Investigation of silicon wafering by wire EDM. J Mater Sci 27, 5805–5810 (1992). https://doi.org/10.1007/BF01119742

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01119742

Keywords

Search

Navigation