Abstract
Thin Ge films, produced by evaporation through 0.3, 1 and 3 torr pressures of argon onto polished aluminum substrates were found to exhibit selective absorption behaviour. Maximum absorptance to emittance ratios of 13∶1 were measured, with values of 8∶1 for films having solar absorptances of 0,9. Film structures were significant in determining collection efficiency. Films deposited at 0.3 torr showed better overall properties due to a larger particle size of about 1 μm compared with an approximate 0.1 μm size measured with films deposited at 1 and 3 torr.
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On leave from Australian Atomic Energy Commission, Sydney, Australia.
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Thogersen, P.P., Cocks, F.H., Pollock, J.T.A. et al. Germanium selective solar absorber surfaces. J Mater Sci 17, 1377–1380 (1982). https://doi.org/10.1007/BF00752249
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DOI: https://doi.org/10.1007/BF00752249