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A mathematical analysis for the peak of the conduction characteristic of formed MIM devices

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Journal of Materials Science Letters

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Author notes

  1. A. K. Ray

    Present address: Electrical and Electronic Engineering Department, The Polytechnic of the South Bank, Borough Road, SE1 0AA, London, UK

Authors and Affiliations

  1. Physics Department, Brunel University, Kingston Lane, Uxbridge, UK

    A. K. Ray & C. A. Hogarth

Authors
  1. A. K. Ray
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  2. C. A. Hogarth
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Ray, A.K., Hogarth, C.A. A mathematical analysis for the peak of the conduction characteristic of formed MIM devices. J Mater Sci Lett 4, 513–516 (1985). https://doi.org/10.1007/BF00720020

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  • DOI: https://doi.org/10.1007/BF00720020

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