Skip to main content
SpringerLink
Log in

Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

The formation of molecule-like complexes, consisting of a defect and a radioactive111In atom, is studied using the perturbedγγ angular correlation technique (PAC). The complexes are characterized by their defect specific electric field gradients which also contain information on the geometry of the formed complexes. Whereas the complex is formed with the111In atom, its electric field gradient is measured after the decay of the radioactive111In atom to111Cd. Formation and dissolution of the molecule-like complexes is pursued for a variety of different conditions, such as sample temperature, dopant concentration and position of the Fermi level. In particular, the interaction of In atoms with the following defects in Si was investigated: Intrinsic defects, created by particle irradiation; substitutional donor atoms (P, As, Sb, Bi); and interstitial impurity atoms (Li, H, and an unidentified X defect); especially, the latter ones are known to passivate acceptor atoms in Si. Methodology and specific properties of the PAC technique will be illustrated with the help of these examples.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. H. de Waard, G.J. Kemerink: Proc. 12th Intl. Conf. Defects in Semiconductors, Physica116B, 210 (1983)

    Google Scholar 

  2. H.G. Devare, P.N. Tandon, S.H. Devare: Proc. 17th Intl. Conf. Hyperfine Interactions (Baltzer, Basel 1987) and Hyp. Int.34/35 (1987)

    Google Scholar 

  3. H.J. von Bardeleben: Proc. 14th Intl. Conf. Defects in Semiconductors (Trans Tech Publications, Switzerland 1986)

    Google Scholar 

  4. C. Abromeit, H. Wellenbergen: Proc. Intl. Conf. Vacancies and Interstitials in Metals and Alloys (Trans Tech Publications, Switzerland 1987)

    Google Scholar 

  5. F. Pleiter, C. Hohenemser: Phys. Rev. B25, 106 (1982)

    Google Scholar 

  6. E. Recknagel, G. Schatz, Th. Wiehert: Hyperfine Interactions of Radioactive Nuclei, ed. by J. Christiansen, Topics in Current Physics, Vol. 31 (Springer, Berlin, Heidelberg 1983) p. 133

    Google Scholar 

  7. J. Takamure, M. Doyama, M. Kiritani: Proc. Yamade 5th Conf. Point Defects and Defect Interactions in Metals (University of Tokyo Press 1982)

  8. E.N. Kaufmann, R. Kalish, R.A. Naumann, S. Lis: J. Appl. Phys.48, 3332 (1977)

    Google Scholar 

  9. H.J. Leisi: Phys. Rev. A1, 1662 (1970)

    Google Scholar 

  10. Th. Wichert, E. Recknagel: Microscopic Methods in Metals, ed. by U. Gonser, Topics in Current Physics, Vol. 40 (Springer, Berlin, Heidelberg 1986) p. 317

    Google Scholar 

  11. H. Frauenfelder, R.M. Steffen: Alpha-, Beta-, Gamma-Ray Spectroscopy, ed. by K. Siegbahn (North-Holland, Amsterdam 1965) Vol. 2, p. 997

    Google Scholar 

  12. M. Deicher, R. Minde, E. Recknagel, Th. Wiehert: Hyp. Int.15/16, 437 (1983)

    Google Scholar 

  13. D. Wegner: Hyp. Int.23, 179 (1985)

    Google Scholar 

  14. J.P. Biersack, L.G. Haggmark: Nucl. Instr. Meth.174, 257 (1980)

    Google Scholar 

  15. C.S. Fuller, J.A. Ditzenberger: J. Appl. Phys.27, 544 (1956)

    Google Scholar 

  16. A. Seeger, K.P. Chik: Phys. Stat. Solidi29, 455 (1968)

    Google Scholar 

  17. M. Deicher, G. Grübel, E. Recknagel, Th. Wichert: Proc. 14th Intl. Conf. Defects in Semiconductors, ed. H.J. von Bardeleben (Trans Tech Publications, Switzerland 1986) p. 1141

    Google Scholar 

  18. M. Deicher, G. Grübel, E. Recknagel, H. Skudlik, Th. Wichert: Hyp. Int.35, 719 (1987)

    Google Scholar 

  19. G.J. Kemerink, F. Pleiter: Phys. Lett.121, 367 (1987)

    Google Scholar 

  20. D. Forkel, F. Meyer, W. Witthuhn, H. Wolf, M. Deicher, M. Uhrmacher: Hyp. Int.35, 715 (1987)

    Google Scholar 

  21. G.D. Watkins: Deep Centers in Semiconductors, ed. by S.T. Pantelides (Gordon and Breach, New York 1985) p. 147

    Google Scholar 

  22. J. Narayan, O.W. Holland, B.R. Appleton: J. Vac. Sci. Technol. B1, 871 (1983)

    Google Scholar 

  23. H.S. Rupprecht, A.E. Michel: Ion Implantation and Beam Processing, ed. by J.S. Williams, J.M. Poate (Academic, Sydney 1984) p. 311

    Google Scholar 

  24. W. Hayes, A.M. Stoneham:Defects and Defect Processes in Nonmetallic Solids (Wiley, New York, 1984)

    Google Scholar 

  25. P.J. Dean:Progress in Solid State Chemistry (Pergamon, New York) Vol. 8, 1 (1973)

    Google Scholar 

  26. J.W. Mayer, L. Eriksson, J.A. Davies:Ion Implantation in Semiconductors (Academic, New York 1970)

    Google Scholar 

  27. M.L. Swanson, N.R. Parikh, E.C. Frey, Th. Wichert: Nucl. Instr. Meth. B33, 591 (1988)

    Google Scholar 

  28. Th. Wichert, M.L. Swanson, A.T. Quenneville: Phys. Rev. Lett.57, 1757 (1986)

    Google Scholar 

  29. M.L. Swanson, Th. Wichert, A.T. Quenneville: Appl. Phys. Lett.49, 265 (1986)

    Google Scholar 

  30. Th. Wichert, M.L. Swanson: To be published

  31. L. Pauling:Die Natur der chemischen Bindung (Verlag Chemie, Weinheim 1973)

    Google Scholar 

  32. D. Forkel, H. Foettinger, M. Iwatschenko-Borho, S. Malzer, F. Meyer, W. Witthuhn, H. Wolf: Proc. 14th Intl. Conf. Defects in Semiconductors, ed. by H.J. von Bardeleben (Trans Tech Publications, Switzerland 1986) p. 557

    Google Scholar 

  33. D. Forkel, W. Witthuhn: Private communication

  34. A. Erbil, G.S. Cargill III, R.F. Boehme: Mat. Res. Soc. Symp. Proc.41, 275 (1985)

    Google Scholar 

  35. R.B. Fair, G.R. Weber: J. Appl. Phys.44, 273 (1973)

    Google Scholar 

  36. A. Kamgar, F.A. Baiocchi: Mat. Res. Soc. Symp. Proc.52, 23 (1986) and other contributions to this volume

    Google Scholar 

  37. Th. Wichert, M.L. Swanson, A.T. Quenneville: Proc. 14th Intl. Conf. Defects in Semiconductors, ed. by H.J. von Bardeleben (Trans Tech Publications, Switzerland 1986) p. 551

    Google Scholar 

  38. G.D. Watkins, F.S. Ham: Phys. Rev. B10, 4071 (1970)

    Google Scholar 

  39. M. Cardona, S.C. Shen, S.P. Varma: Phys. Rev. B23, 5329 (1981)

    Google Scholar 

  40. C.-T. Sah, J.Y.-C. Sun, J.J.-T. Tzou: Appl. Phys. Lett.43, 204 (1983)

    Google Scholar 

  41. J.I. Pankove, D.E. Carlson, J.E. Berkeyheiser, R.O. Wance: Phys. Rev. Lett.51, 2224 (1983)

    Google Scholar 

  42. M. Stavola, S.J. Pearton, G. Davies: Mat. Res. Soc. Symp. Proc. Vol. 104 (1988)

  43. S.J. Pearton, J.W. Corbett, T.S. Shi: Appl. Phys. A43, 153 (1987)

    Google Scholar 

  44. A. Schnegg, M. Grundner, H. Jacob: Semiconductor Silicon, Proc. 86-4, ed. by H.R. Huff, T. Abe, B. Kolbesen (The Electrochemical Soc., Pennington 1986) p. 198

    Google Scholar 

  45. A. Schnegg, H. Prigge, M. Grundner, P.O. Hahn, H. Jacob: Mat. Res. Soc. Symp. Proc.104, 291 (1988)

    Google Scholar 

  46. C.H. Seager, R.A. Anderson, J.K.G. Panitz: J. Mater. Res.2, 96 (1987)

    Google Scholar 

  47. Th. Wichert, H. Skudlik, M. Deicher, G. Grübel, R. Keller, E. Recknagel, L. Song: Phys. Rev. Lett.59, 2087 (1987)

    Google Scholar 

  48. A.D. Marwick, G.S. Oehrlein, N.M. Johnson: Phys. Rev. B36, 4539 (1987)

    Google Scholar 

  49. A.D. Marwick, G.S. Oehrlein, J.H. Barrett, N.M. Johnson: Mat. Soc. Symp. Proc.104, 259 (1988)

    Google Scholar 

  50. B. Bech Meisen, J.U. Andersen, S.J. Pearton: Phys. Rev. Lett.60, 321 (1988)

    Google Scholar 

  51. Th. Wiehert, H. Skudlik, H.-D. Carstanjen, T. Enders, M. Deicher, G. Grübel, R. Keller, L. Song, M. Stutzmann: Mat. Res. Soc. Symp. Proc.104, 265 (1988)

    Google Scholar 

  52. N.M. Johnson, F.A. Ponce, R.A. Street, R.J. Nemanich: Phys. Rev. B35, 4166 (1987)

    Google Scholar 

  53. C.-T. Sah, S.C.-S. Pan, C.C.-H. Hsu: J. Appl. Phys.57, 5148 (1985)

    Google Scholar 

  54. J. Reichel, S. Sevcik: Phys. Stat. Sol. (a)103, 413 (1987)

    Google Scholar 

  55. C.E. Jones, G.E. Johnson: J. Appl. Phys.52, 5159 (1981)

    Google Scholar 

  56. R. Baron, J.P. Baukus, S.D. Allen, T.C. McGill, M.H. Young, H. Kimura, H.V. Winston, O.J. Marsh: Appl. Phys. Lett.34, 257 (1979)

    Google Scholar 

  57. A. Schnegg, H. Prigge: Private communication

  58. D. Forkel et al: Submitted

  59. J.C. Soares, G. Grübel, C. Jeynes, B.L. Sealy, M.F. da Silva, A.A. Melo: Europ. Mat. Res. Soc. Symp. Proc.15, 595 (1987)

    Google Scholar 

  60. R. Kalish, M. Deicher, G. Schatz: J. Appl. Phys.53, 4793 (1982)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Fakultät für Physik, Universität, D-7750, Konstanz, Fed. Rep. Germany

    Th. Wichert, M. Deicher, G. Grübel, R. Keller, N. Schulz & H. Skudlik

Authors
  1. Th. Wichert
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Deicher
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. Grübel
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. R. Keller
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. N. Schulz
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. H. Skudlik
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wichert, T., Deicher, M., Grübel, G. et al. Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy. Appl. Phys. A 48, 59–85 (1989). https://doi.org/10.1007/BF00617764

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00617764

PACS

Search

Navigation