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Plasma-assisted etching

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Abstract

The mechanistic and parametric complexity of a plasma etching environment often causes confusion and delays in the development of a suitable plasma etching process. This paper is an attempt to alleviate this problem by discussing some of the important physical and chemical phenomena and, where possible, relating these phenomena to apparatus selection and operation.

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    J. W. Coburn

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Coburn, J.W. Plasma-assisted etching. Plasma Chem Plasma Process 2, 1–41 (1982). https://doi.org/10.1007/BF00566856

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