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1.3 μm planar buried heterostructure distributed feedback lasers grown by four-step MOVPE

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Abstract

Data are presented on InGaAsP/InP planar buried heterostructure (PBH) distributed feedback (DFB) lasers operating at 1.3 μm. A four-step MOVPE process and holographic lithography are employed to fabricate these lasers. The CW laser threshold and the slope efficiency from these lasers are 9 mA and 0.23 mW mA-1 per facet at room temperature. Single-longitudinal-mode operation with side-mode suppression of more than 35 dB is obtained at 5 mW.

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Authors and Affiliations

  1. Photonic Devices Laboratory, Semiconductor R&D Laboratories, Hyundai Electronics Industries Co. Ltd, San 136-1, Ami-ri, Bubal-eub, Ichon-kun, 467-860, Kyoungki-do, Korea

    D. S. Kim, M. K. Kang, T. J. Kim, S. W. Lee, J. K. Kang, N. J. Kim, A. S. Kim, H. R. Cho, M. K. Park & Y. K. Sin

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  1. D. S. Kim
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  2. M. K. Kang
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  3. T. J. Kim
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  4. S. W. Lee
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  5. J. K. Kang
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  6. N. J. Kim
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  7. A. S. Kim
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  8. H. R. Cho
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  9. M. K. Park
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  10. Y. K. Sin
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Kim, D.S., Kang, M.K., Kim, T.J. et al. 1.3 μm planar buried heterostructure distributed feedback lasers grown by four-step MOVPE. Opt Quant Electron 27, 459–464 (1995). https://doi.org/10.1007/BF00563584

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  • DOI: https://doi.org/10.1007/BF00563584

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