Abstract
High temperature creep of single crystal gadolinium gallium garnet (GGG) was studied in the temperature range of 1723–1853 K (0.86–0.94 Tm, Tm: melting temperature) and strain rate from 9 · 10−7 s−1 to 2 · 10−5 s−1. The compression tests were made along the 〈100〉 and 〈111〉 orientations. We have performed both constant strain-rate and stress-dip tests. For the 〈100〉 orientation, deformation occurs via the 〈111〉 slip systems. For the 〈111〉 orientation, both the 〈100〉 {010} and the 〈111〉 slip systems can be activated. GGG garnet is very strong under these conditions: σ/μ=(1–3)×10−3 (σ: creep strength, μ: shear modulus). The creep behavior is characterized by a power law with stress exponent n=2.9–3.3 and high activation energies E*=612–743 kJ/mol (E*∼45×RTm, at zero stress which decrease with the increase of stress). Stress-dip tests suggest a small internal stress (σi/σ∼0.62; σi: internal stress, σ: applied stress) compared to other materials. These results suggest that the high creep strength of GGG is mainly due to difficulty of dislocation glide rather than dislocation climb.
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Wang, Z., Karato, Si. & Fujino, K. High temperature creep of single crystal gadolinium gallium garnet. Phys Chem Minerals 23, 73–80 (1996). https://doi.org/10.1007/BF00202301
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DOI: https://doi.org/10.1007/BF00202301