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Applications of Diamond-Anvil Cells to Materials Science

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Part of the book series: NATO ASI Series ((ASIC,volume 401))

Abstract

Diamond-anvil cells allow the study of condensed matter as the interatomic spacing is changed over a wide range. This causes both quantitative and qualititative changes in material properties. Semiconductors undergo phase transitions at relatively low pressures, and they provide many examples of the use of high pressure in the range up to 10GPa. The pressure range up to 100GPa is widely used and examples are discussed from geophysics and fundamental condensed matter physics. The multi-megabar region (over 100GPa) is still difficult and some of the problems in working at these pressures are reviewed.

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References

  • Besson, J.M., Weill, G., Mansot, J.L. and Gonzalez, J. (1990) Phase diagram of GaAs,High Pressure Research 4, 312–314.

    Article  Google Scholar 

  • Boehler, R. (1991) Advances in high temperature research in diamond cells, in Recent Trends in High Pressure Research: Proceedings of the XIII AIRAPT Conference, 591–600.

    Google Scholar 

  • Boehler, R. and Chopelas, A. (1991) A new approach to laser heating on high pressure mineral physics, Geophys. Rev. Lett. 18, 1147–1150.

    Google Scholar 

  • Cheong, B.H. and Chang, K.J. (1991) First principles study of the structural properties of Sn under pressure, Phys. Rev. B44, 4103–4108.

    Google Scholar 

  • Christenen, U. (1988) Is subducted lithosphere trapped at the 670-km discontinuity? Nature 336, 462–463.

    Article  Google Scholar 

  • Duclos, S.J., Brister, K., Haddon, R.C., Kortan, A.R. and Thiel, F.A. (1991) Effects of pressure and stress on C60 fullerene to 20GPa, Nature 351, 380–382.

    Article  CAS  Google Scholar 

  • Duclos, S.J., Vohra, Y.K. and Ruoff, A.L. (1987) Hcp-to-fcc transition in silicon at 78GPa and studies to 100GPa, Phys. Rev. Lett. 58, 775–778.

    Article  CAS  Google Scholar 

  • Dunstan, D.J. (1991) Relaxed buffer layers, Semicon. Sci. Technol. 6, A76–A79.

    Article  CAS  Google Scholar 

  • Dunstan, D.J., Gil, B. and Homewood, K.P. (1988) Hydrostatic and uniaxial pressure coefficients of CdTe, Phys. Rev. B38, 7862–7865.

    Google Scholar 

  • Dunstan, D.J., Prins, A.D., Gil, B. and Faurie, J.P. (1991) Phase transitions in CdTe/ZnTe strained-layer superlattices Phys. Rev. B44, 4017–4020.

    Google Scholar 

  • Farrow, R.F.C., Robertson, D.S., Williams, G.M., Cullis, A.G., Jones, G.R., Young, I.M. and Dennis, P.N.J. (1981) The growth of metastable heteroepitaxial films of a-Sn by metal beam epitaxy, J. Crystal Growth 54, 507–518.

    CAS  Google Scholar 

  • Gil, B., Dunstan, D.J., Calatayud, J., Mathieu, H. and Faurie, J.P. (1989) Electronic structure of cadmium-telluride—zinc-telluride strained-layer superlattices under pressure, Phys. Rev. B40, 5522–5528.

    Google Scholar 

  • Grimsditch, M., Loubeyre, P. and Polian, A. (1986) Brillouin scattering and three-body forces in argon at high pressure, Phys. Rev. B33, 7192–7200.

    Google Scholar 

  • Hemley, R.J. and Mao, H.K. (1990) Structural transitions in hydrogen and deuterium at ultrahigh pressures, High Pressure Research 3, 156–158.

    Article  Google Scholar 

  • Hu, J.Z., Merkle, L.D., Menoni, C.S. and Spain, I.L. (1986) Crystal data for high-pressure phases of silicon, Phys. Rev. B34, 4679–4684.

    Google Scholar 

  • Hu, S.M. (1991) Misfit dislocations and critical thickness of epitaxy, J. Appl. Phys. 69, 7901–7903.

    Article  Google Scholar 

  • Keyes, R.W. (1962) Elastic properties of diamond-type semiconductors, J. Appl. Phys. 33, 3371–3372.

    Article  CAS  Google Scholar 

  • Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., Gu, B.P., Hefetz, Y. and Nurmikko. A.V. (1986) Two-dimensional metastable magnetic semiconductor structures, Appl. Phys. Lett. 48, 1482–1484.

    Article  CAS  Google Scholar 

  • Mao, H.K., Hemley, R.J., Wu, Y., Jephcoat, A.P., Finger, L.W., Zha, C.S. and Bassett, W.A. (1988) High-pressure phase diagram and equation of state of solid helium from single-crystal X-ray diffraction, Phys. Rev. Lett. 60, 2649–2652.

    Article  CAS  Google Scholar 

  • Navrotsky, A. and Phillips, J.C. (1975) lonicity and phase transitions at negative pressure, Phys. Rev. B11, 1583–1586.

    Google Scholar 

  • Neethiulagarajan, A. and Balasubramanian, S. (1991) Theoretical isothermal equation of state of the high-pressure phases of silicon, Phys. Rev. B43, 13525–13527.

    Google Scholar 

  • Nelmes, R.J., Hatton, P.D., McMahon, M.I., Piltz, R.O. and Crain, J. (1991) Angle dispersive powder diffraction techniques for crystal structure refinement at high pressure, in Recent Trends in High Pressure Research: Proceedings of the XIII AIRAPT Conference, 753–753.

    Google Scholar 

  • Paul, W. and Warschauer, D.M. (1963) Solids at High Pressure (McGraw-Hill, New York) Ch.8, p.226.

    Google Scholar 

  • Prins, A.D. and Dunstan, D.J. (1988) A determination of the relative bulk moduli of Ga!nAsP and InP, Philos. Mag. Lett. B58, 37–44.

    Google Scholar 

  • Prins, A.D. and Dunstan, D.J. (1989) Bulk moduli of GalnAsP and GaInAs by photoluminescence up to 100kbar, Semicon. Sci. Technol. 4, 239–340.

    Article  CAS  Google Scholar 

  • Prins, A.D., Gil, B., Dunstan, D.J. and Faurie, J.P. (1990) CdTe/ZnTe strained layer superlattices under high pressure, High Pressure Research 3, 63–65.

    Article  Google Scholar 

  • Prins, A.D., Lambkin, J.D., O’Reilly, E.P., Adams, A.R., Dunstan, D.J., Pritchard, R., Truscott, W.S. and Singer, K.E. (1992) Band offsets of strained GaAsSb/GaAs quantum wells from high pressure photoluminescence, Physical Review B (to be published).

    Google Scholar 

  • Prins, A.D., Lambkin, J.D., O’Reilly, E.P., Adams, A.R., Pritchard, R., Truscott, W.S. and Singer, K.E. (1990) Band offsets in GaAsSb/GaAs strained-layer structures from high-pressure photoluminescence, Proceedings of the 20th International Conference on the Physics of Semiconductors (Thessaloniki, Greece, 1990), ed. E.M. Anastassakis and J.D. Joannopoulos (World Scientific, Singapore) pp. 933–936.

    Google Scholar 

  • Ross, M. (1990) High pressure studies of planetary matter, High Pressure Research 5, 683–685.

    Article  Google Scholar 

  • Rockwell, B., Chandrasekhar, H.R., Chandrasekhar, M., Ramdas, A.K., Kobayashi, M. and Gunshor, R.L. (1991) Pressure tuning of strains in semiconductor heterostructures: (ZnSe epilayer)l(GaAs epilayer), Phys. Rev. B44, 11307–11314.

    Google Scholar 

  • Ruoff, A.L. (1991a) X-ray diffraction in the 500GPa range: Prospects for attaining 1TPa, in Recent Trends in High Pressure Research: Proceedings of the XIII AIRAPT Conference, 769–778.

    Google Scholar 

  • Ruoff, A.L. (1991b) Megabar chemistry, in “Recent Trends in High Pressure Research: Proceedings of the XIII AIRAPT Conference,” 576–578.

    Google Scholar 

  • Shimizu, H., Brody, E.M., Mao, H.K. and Bell, P.M. (1981) Brillouin measurements of solid n-H2 and n-D2 to 200kbar at room temperature, Phys. Rev. Lett. 47, 128–131.

    Article  CAS  Google Scholar 

  • Siringo, F., Piccitto, G. and Pucci, R. (1990) Metal-insulator transition of solid halogens under pressure, High Pressure Research 3, 162–164.

    Article  Google Scholar 

  • Takemura, K., Minomura, S., Shimomura, O., Fujii, Y. and Axe, J.D. (1982) Structural aspects of solid iodine associated with metallisation and molecular dissociation under high pressure, Phys. Rev. B26, 998–1004.

    Google Scholar 

  • Tanaka, K. and Maeda, J. (1986) Pressure-volume measurements by using diamond-anvil cells and an imaging system, Rev. Sci. Instrum. 57, 500–501.

    Article  CAS  Google Scholar 

  • Warburton, R.J., Nicholas, R.J., Mason, N.J., Walker, P.J., Prins, A.D. and Dunstan, D.J. (1991) High-pressure investigation of GaSb and Ga 1-x In x Sb quantum wells, Phys. Rev. B43, 4994–5000.

    Google Scholar 

  • Weinstein, B.A., Cui, L.J., Venkateswaran, U.D. and Chambers, F.A. (1991) Enhanced Stability of heterostructures under pressure, in NATO ASI Series B Frontiers of High Pressure Research, ed. H.D. Hochheimer and R.D. Etters (Plenum Press, New York) pp. 257–267.

    Google Scholar 

  • Venkateswaran, U., Chandrasekhar, H., Chandrasekhar, M., Vojak, B.A., Chambers, F.A. and Meese, J.M., (1986) High pressure studies of G GaAs-G 1-x Al x As quantum wells of widths 26 to 150Å,Phys. Rev. B33, 8416–8423.

    Google Scholar 

  • Vohra, Y.K. (1991) Spectroscopic studies on diamond anvil under extreme static stress, in Recent Trends in High Pressure Research: Proceedings of the XIII AIRAPT Conference, 349–358.

    Google Scholar 

  • Vohra, Y.K. and Ruoff, A.L. (1990) Phase transitions and equations of state at multimegabar pressures, High Pressure Research 4, 296–299.

    Article  Google Scholar 

  • van de Walle, C.G. and Martin, R.M. (1987) Theoretical study of band offsets at semiconductor interfaces, Phys. Rev. B35, 8154–8165.

    Google Scholar 

  • Wilkinson, V.A., Prins, A.D., Dunstan, D.J., Howard, L.K. and Emeny, M.T. (1991) Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AlGaAs by high pressure photoluminescence, J. Electronic Materials 20, 509–516.

    Article  CAS  Google Scholar 

  • Warburton, R.J., Nicholas, R.J., Mason, N.J., Walker, P.J., Prins, A.D., and Dunstan, D.J. (1991) High-pressure investigation of GaSb and Ga 1-x In x Sb quantum wells, Phys. Rev. B43, 4994–5000.

    Google Scholar 

  • Wolford, D.J., Keuch, T.F., Bradley, J.A., Gell, M.A., Nimmo, D. and Jaros, M. (1986) Pressure dependence of GaAs/Al x Ga 1-x iAs quantum-well structures: The determination of valence-band offsets, J. Vac. Sci. Tech. B4, 1043–1050.

    Google Scholar 

  • Yu, S.C., Spain, I.L. and Skelton, E.F. (1978) Polymorphism and the crystal structure of InSb at elevated temperature and pressure, J. Appl. Phys. 49 4741–4745.

    Article  CAS  Google Scholar 

  • Yuen, W.T., Liu, W.K., Stradling, R.A. and Joyce, B.A. (1991) The growth and electrical properties of a-Sn thin films grown on InSb(110) and (111) substrates by molecular beam epitaxy, J. Crystal Growth 111, 943–947.

    Article  CAS  Google Scholar 

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Dunstan, D.J. (1993). Applications of Diamond-Anvil Cells to Materials Science. In: Winter, R., Jonas, J. (eds) High Pressure Chemistry, Biochemistry and Materials Science. NATO ASI Series, vol 401. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-1699-2_5

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  • DOI: https://doi.org/10.1007/978-94-011-1699-2_5

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4744-9

  • Online ISBN: 978-94-011-1699-2

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