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Effect of Overlayer Thickness on the Nanoindentation of SiO2 /Si

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Forces in Scanning Probe Methods

Part of the book series: NATO ASI Series ((NSSE,volume 286))

Abstract

The capability of the atomic force microscope to quantitatively measure nanoscale mechanical properties is shown for Si single crystals with different overlayer thicknesses. The experimental data is correlated with modeling results of the indentation process using finite element analysis.

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Author information

Authors and Affiliations

  1. Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37205, USA

    Charles F. Draper

  2. Code 6170, Naval Research Laboratory, Washington, D.C., 20375-5342, USA

    David M. Schaefer, Richard J. Colton & Steven M. Hues

Authors
  1. Charles F. Draper
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  2. David M. Schaefer
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  3. Richard J. Colton
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  4. Steven M. Hues
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Editor information

Editors and Affiliations

  1. Institute of Physics, University of Basel, Basel, Switzerland

    H. J. Güntherodt  & E. Meyer  & 

  2. Ciba Geigy Ltd., Central Research Services Physics, K-127.1.50, Basel, Switzerland

    D. Anselmetti

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© 1995 Springer Science+Business Media Dordrecht

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Draper, C.F., Schaefer, D.M., Colton, R.J., Hues, S.M. (1995). Effect of Overlayer Thickness on the Nanoindentation of SiO2 /Si. In: Güntherodt, H.J., Anselmetti, D., Meyer, E. (eds) Forces in Scanning Probe Methods. NATO ASI Series, vol 286. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0049-6_7

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  • DOI: https://doi.org/10.1007/978-94-011-0049-6_7

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-4027-3

  • Online ISBN: 978-94-011-0049-6

  • eBook Packages: Springer Book Archive

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