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DC and AC Models of Partially-Depleted SOI MOSFETs in Weak Inversion

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Progress in SOI Structures and Devices Operating at Extreme Conditions

Part of the book series: NATO Science Series ((NAII,volume 58))

Abstract

Subthreshold range is critical for proper operation of analog SOI ICs in harsh environment. Partially depleted (PD) SOI MOSFETs are particularly sensitive to these conditions, because of the parasitic phenomena like kink-effect. This regards to operation in steady-state .and small-signal excitations conditions. Since integrated circuits based on PD SOI MOSFETs are widely fabricated the problem of reliable small-signal modelling is relevant.

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References

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Author information

Authors and Affiliations

  1. Institute of Electron Technology, Al.Lotników 32/46, 02-668, Warszawa, Poland

    Daniel Tomaszewski & Krzysztof Domański

  2. Institute of Microlectronics and Optoelectronics, Warsaw University of Technology, ul.Koszykowa 75, 00-662, Warszawa, Poland

    Krzysztof Domański, Lidia Łukasiak, Agnieszka Zaręba, Jan Gibki & Andrzej Jakubowski

Authors
  1. Daniel Tomaszewski
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  2. Krzysztof Domański
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  3. Lidia Łukasiak
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  4. Agnieszka Zaręba
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  5. Jan Gibki
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  6. Andrzej Jakubowski
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Editor information

Editors and Affiliations

  1. Institut de Microélectronique, Electromagnétisme et Photonique, INPG-CNRS, Grenoble, France

    F. Balestra

  2. Institute of Semiconductor Physics, National Academy of Sciences, Kyiv, Ukraine

    A. Nazarov  & V. S. Lysenko  & 

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© 2002 Springer Science+Business Media Dordrecht

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Tomaszewski, D., Domański, K., Łukasiak, L., Zaręba, A., Gibki, J., Jakubowski, A. (2002). DC and AC Models of Partially-Depleted SOI MOSFETs in Weak Inversion. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_22

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  • DOI: https://doi.org/10.1007/978-94-010-0339-1_22

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-0576-3

  • Online ISBN: 978-94-010-0339-1

  • eBook Packages: Springer Book Archive

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