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Pentacene Becomes Mott–Hubbard Insulator by Potassium Doping

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Electronic Processes in Organic Electronics

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 209))

Abstract

The impact of potassium (K) doping on the electronic structure of single crystalline (SC) pentacene (Pn) thin film grown on Cu(110) was investigated by high-sensitivity angle-resolved ultraviolet photoemission spectroscopy for K x Pn1 (0 ≤ x ≤ 1). At room temperature (293 K), we observed that (i) Pn electronic states shift towards high binding side with progressive growth of a gap state with the K-doping level, (ii) the HOMO band dispersion of the pristine Pn SC multilayer survives even at x = 1, and (iii) no dispersion occurs for the K-induced gap state. At 50 K, on the other hand, we found a small dispersion (width ~0.08 eV) of the K-induced gap state for K1Pn1 SC multilayer. This finding demonstrates that the K-induced gap state originates from the Mott–Hubbard insulator formed by electron transfer from K atom to Pn LUMO. The impact of K doping on the energy level alignment was discussed in terms of coexistence of K1Pn1 Mott–Hubbard insulator and Pn SC film.

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Acknowledgments

This work was financially supported by the Global-COE Program of MEXT (G03: Advanced School for Organic Electronics, Chiba University) and Grant-in-Aid for Scientific Research (A; Grant No. 20245039).

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Authors and Affiliations

  1. Department of Nanomaterial Science, Graduate School of Advanced Integration Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan

    Fabio Bussolotti, Satoshi Kera & Nobuo Ueno

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  1. Fabio Bussolotti
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  2. Satoshi Kera
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  3. Nobuo Ueno
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Correspondence to Fabio Bussolotti .

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Editors and Affiliations

  1. Chiba University, Chiba, Japan

    Hisao Ishii

  2. Chiba University, Chiba, Japan

    Kazuhiro Kudo

  3. Chiba University, Chiba, Japan

    Takashi Nakayama

  4. Chiba University, Chiba, Japan

    Nobuo Ueno

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Bussolotti, F., Kera, S., Ueno, N. (2015). Pentacene Becomes Mott–Hubbard Insulator by Potassium Doping. In: Ishii, H., Kudo, K., Nakayama, T., Ueno, N. (eds) Electronic Processes in Organic Electronics. Springer Series in Materials Science, vol 209. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55206-2_5

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