Abstract
Utilizing buried layer substrates into which As was ion implanted at the surface, we evaluated the damage factor associated with As ion implantation, and succeeded in explaining the transient enhanced diffusion of buried layer B as well as the surface As redistribution.
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References
A. Hoefler et al., J. Appl. Phys., vol. 78, p. 3671,1995
K. Suzuki et al., IEDM Technical Digest, p. 502, 1997
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© 1998 Springer-Verlag/Wien
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Suzuki, K., Strecker, N., Fichtner, W. (1998). Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_15
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_15
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