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Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells

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Simulation of Semiconductor Devices and Processes
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Abstract

This paper presents for the first time the use of two-dimensional (2D) device simulation for optimising design parameters of high-efficiency silicon solar cells of practical dimensions. We examine the influence of 2D effects on the operating conditions of these devices and give results for the optimal spacing of the front metal fingers. Numerical difficulties inherent in the simulations are being discussed.

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References

  1. M. A. Green. Recent advances in silicon solar cell performance. In Proc. 10th European Communities Photovoltaic Solar Energy Conf., p. 250, Lisbon, 1991.

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  2. A. Aberle, W. Warta, J. Knobloch, and B. Voss. Surface passivation of high efficiency silicon solar cells. In Proc. 21st IEEE Photovoltaic Specialists Con f., p. 233, Orlando, 1990.

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  3. Integrated Systems Lab. Simul Manual. ETH Zürich, Switzerland, 1992.

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  4. A. B. Sproul and M. A. Green. Improved value for the silicon intrinsic carrier concentration from 275 to 375 K. J. App. Phys., 70:846–54, 1991.

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© 1993 Springer-Verlag Wien

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Heiser, G., Aberle, A.G., Wenham, S.R., Green, M.A. (1993). Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_96

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_96

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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